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2SK1517-VB Product details
Back to previous pageProduct introduction：
### 1. 2SK1517-VB Product Introduction
2SK1517-VB is a single N-channel MOSFET manufactured using SJ_Multi-EPI technology. The device is packaged in a TO3P package and has high drain-source voltage and current handling capabilities, making it suitable for power management and switching applications that need to withstand higher voltages and currents. Its features include a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V, as well as low on-resistance and high drain current, making it suitable for a variety of high-voltage and high-power applications.
2SK1517-VB is a single N-channel MOSFET manufactured using SJ_Multi-EPI technology. The device is packaged in a TO3P package and has high drain-source voltage and current handling capabilities, making it suitable for power management and switching applications that need to withstand higher voltages and currents. Its features include a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V, as well as low on-resistance and high drain current, making it suitable for a variety of high-voltage and high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### 2. Detailed parameter description of 2SK1517-VB
- **Model**: 2SK1517-VB
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: 2SK1517-VB
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
### 3. Application fields and module examples
1. **Power electronics**: 2SK1517-VB is suitable for switching power supplies, inverters, and frequency converters in the field of power electronics that need to withstand higher voltages and currents. Its high performance and reliability make it an ideal choice for these applications.
2. **Electric vehicles**: In the motor drive of electric vehicles, high-performance switching devices are required to control the start and stop and speed regulation of the motor. The characteristics of 2SK1517-VB make it an ideal choice for such applications, ensuring the efficient operation of electric vehicle systems.
3. **Industrial high-voltage equipment**: In the industrial field, equipment that needs to withstand high voltage and high current, such as high-voltage power supplies, high-voltage generators, etc. The characteristics of 2SK1517-VB make it suitable for switching and control in these devices.
In summary, 2SK1517-VB is suitable for power management and switching applications that require high voltage and high current handling capabilities. Its characteristics give it broad application prospects in power electronics, electric vehicles, and industrial high-voltage equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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