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2SK1516-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Model: 2SK1516-VB**
2SK1516-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO-3P package. This product has high drain voltage and low on-resistance, suitable for applications requiring high power and high efficiency. It adopts SJ_Multi-EPI technology and has good electrical characteristics and reliability.
**Model: 2SK1516-VB**
2SK1516-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO-3P package. This product has high drain voltage and low on-resistance, suitable for applications requiring high power and high efficiency. It adopts SJ_Multi-EPI technology and has good electrical characteristics and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### Detailed parameter description
- **Package:** TO-3P
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 600V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 380mΩ @ VGS=10V
- **Drain current (ID):** 11A
- **Technology:** SJ_Multi-EPI
- **Package:** TO-3P
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 600V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 380mΩ @ VGS=10V
- **Drain current (ID):** 11A
- **Technology:** SJ_Multi-EPI
Domain and module applications：
### Applications and module examples
**1. Power electronic converters: **
2SK1516-VB is suitable for power switches in power electronic converters that require high drain voltage and high power. Its low on-resistance and high drain voltage can provide stable power conversion and high efficiency.
**2. HVDC transmission systems: **
In HVDC transmission systems, this MOSFET can be used for power switches and regulators. Its high drain voltage and low on-resistance help improve energy conversion efficiency and system stability.
**3. High-performance power modules: **
2SK1516-VB is suitable for power switches and regulators in high-performance power modules. Its high drain voltage and low on-resistance can improve energy conversion efficiency and system stability.
**4. Industrial high-frequency electronic equipment: **
In industrial high-frequency electronic equipment, this model can be used for power switches and regulators. Its high drain current and low on-resistance can improve the efficiency and response speed of the equipment.
Through the above application examples, it can be seen that the 2SK1516-VB MOSFET is widely applicable in fields requiring high power and high efficiency, reflecting its importance in modern electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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