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2SK1507-01-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Product Model: 2SK1507-01-VB**
**Package Type: TO220F**
**Configuration: Single N-channel**
**Technology: Plannar**
**Main Features:**
- **VDS (drain-source voltage): ** 650V
- **VGS (gate-source voltage): ** ±30V
- **Vth (threshold voltage): ** 3.5V
- **RDS(ON) (on-resistance): ** 830mΩ@VGS=10V
- **ID (drain current): ** 10A
2SK1507-01-VB is a high voltage N-channel MOSFET suitable for high voltage and medium power applications.
**Product Model: 2SK1507-01-VB**
**Package Type: TO220F**
**Configuration: Single N-channel**
**Technology: Plannar**
**Main Features:**
- **VDS (drain-source voltage): ** 650V
- **VGS (gate-source voltage): ** ±30V
- **Vth (threshold voltage): ** 3.5V
- **RDS(ON) (on-resistance): ** 830mΩ@VGS=10V
- **ID (drain current): ** 10A
2SK1507-01-VB is a high voltage N-channel MOSFET suitable for high voltage and medium power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Parameter Description
1. **Basic parameters:**
- **Model:** 2SK1507-01-VB
- **Package type:** TO220F
- **Configuration:** Single N-channel
- **Technology:** Plannar
2. **Electrical characteristics:**
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
3. **On-resistance (RDS(ON)):**
- **@ VGS=10V:** 830mΩ
4. **Drain current (ID):** 10A
5. **Other characteristics:**
- **Maximum power dissipation:** 100W
- **Operating temperature range:** -55°C to 150°C
Domain and module applications：
### Application fields and modules
1. **Power adapter:**
Due to the high voltage and medium power characteristics of 2SK1507-01-VB, it is suitable for medium power applications such as power adapters, providing stable power output.
2. **Electric vehicle charging pile:**
In the power control circuit of the electric vehicle charging pile, this MOSFET can be used for switching power supply and power conversion to ensure efficient energy conversion and stable current output.
3. **Industrial power supply:**
In industrial power supply that requires high voltage and medium power, this MOSFET can be used for switching power supply and power control circuit to ensure efficient and stable operation of the power supply.
4. **UPS system:**
In the power conversion and management circuit in the UPS system, this MOSFET can be used for inverters and power optimizers to ensure efficient energy conversion and stable operation of the system.
In summary, 2SK1507-01-VB is a high-voltage N-channel MOSFET suitable for high-voltage and medium-power applications. It can be widely used in power adapters, electric vehicle charging piles, industrial power supplies and UPS systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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