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2SK1486-VB Product details
Back to previous pageProduct introduction：
### 1. 2SK1486-VB Product Introduction
2SK1486-VB is a single N-channel MOSFET in TO3P package, manufactured based on SJ_Multi-EPI technology. This model has a high drain-source voltage and moderate on-resistance, suitable for circuit designs requiring high withstand voltage and medium power. Its maximum drain-source voltage (VDS) is 600V, the maximum gate-source voltage (VGS) is ±30V, the threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 60mΩ at VGS=10V, and the maximum drain current (ID) is 47A.
2SK1486-VB is a single N-channel MOSFET in TO3P package, manufactured based on SJ_Multi-EPI technology. This model has a high drain-source voltage and moderate on-resistance, suitable for circuit designs requiring high withstand voltage and medium power. Its maximum drain-source voltage (VDS) is 600V, the maximum gate-source voltage (VGS) is ±30V, the threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 60mΩ at VGS=10V, and the maximum drain current (ID) is 47A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 47A | 60mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### 2. 2SK1486-VB Detailed parameter description
- **Model**: 2SK1486-VB
- **Package**: TO3P
- **Type**: Single N-channel
- **Technology**: SJ_Multi-EPI
- **Maximum drain-source voltage (VDS)**: 600V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 60mΩ @ VGS=10V
- **Maximum drain current (ID)**: 47A
- **Turning on delay time**: < 10ns
- **Turning off delay time**: < 20ns
- **Total gate charge (Qg)**: 140nC
- **Gate-drain charge (Qgd)**: 35nC
- **Drain-source charge (Qgs)**: 50nC
- **Thermal resistance (RθJC)**: 1.2°C/W
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
### 3. Application fields and module examples
#### High voltage power supply module
2SK1486-VB can be used to design high voltage power supply modules, such as high voltage DC power supply, power transmission system, etc., to provide stable power conversion and transmission.
#### Electric vehicle motor drive
In electric vehicle motor drive, this model can be used to design motor drive module to provide efficient power conversion and power output.
#### Industrial control system
In industrial control system, 2SK1486-VB can be used to design high voltage switch module to achieve high voltage control and protection of industrial equipment.
#### High voltage lighting drive
In high voltage lighting system, this model can be used to design LED lamp driver to provide stable high voltage output and efficient energy conversion.
#### Solar Inverter
In solar power generation systems, 2SK1486-VB can be used to design solar inverters to convert the DC power generated by solar panels into AC power to achieve access to the power grid.
In summary, 2SK1486-VB is an N-channel MOSFET suitable for medium-high voltage and medium-power circuit design. It has a high drain-source voltage and moderate on-resistance, and is suitable for a variety of electronic devices and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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