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2SK1475-TL-VB Product details
Back to previous pageProduct introduction：
### 1. 2SK1475-TL-VB Product Introduction
VBsemi's 2SK1475-TL-VB is a high-performance single N-channel MOSFET manufactured using Trench technology. The device is packaged in a TO-252 package and has medium drain-source voltage and high current handling capability, making it suitable for power management and switching applications that need to withstand medium voltage and high current. Its features include a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, ensuring stable operation in a variety of circuits.
VBsemi's 2SK1475-TL-VB is a high-performance single N-channel MOSFET manufactured using Trench technology. The device is packaged in a TO-252 package and has medium drain-source voltage and high current handling capability, making it suitable for power management and switching applications that need to withstand medium voltage and high current. Its features include a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, ensuring stable operation in a variety of circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### 2. Detailed parameter description of 2SK1475-TL-VB
- **Model**: 2SK1475-TL-VB
- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ @ VGS=10V
- **Drain current (ID)**: 15A
- **Technology**: Trench
- **Model**: 2SK1475-TL-VB
- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ @ VGS=10V
- **Drain current (ID)**: 15A
- **Technology**: Trench
Domain and module applications：
### 3. Application fields and module examples
1. **Power management**: Due to its high drain-source voltage and low on-resistance, 2SK1475-TL-VB is suitable for switching elements in medium voltage power management systems. It can be used in power management modules in server power supplies, communication power supplies and other fields.
2. **LED lighting**: In the field of LED lighting, high-performance switching devices are required to control the brightness and current of LED lights. The characteristics of 2SK1475-TL-VB make it an ideal choice for such applications, especially for LED drivers in indoor and commercial lighting systems.
3. **Industrial control system**: This MOSFET is suitable for various industrial control systems such as PLC, motor drives, etc. Its high performance and reliability make it an ideal choice in industrial environments, enabling effective power and signal control in industrial equipment and automation systems.
In summary, 2SK1475-TL-VB is suitable for power management and switching applications that require medium voltage and large current handling capabilities. Its characteristics give it broad application prospects in power management, LED lighting, industrial control systems and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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