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2SK1468-VB Product details
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### 2SK1468-VB MOSFET Product Overview
**Introduction: **
2SK1468-VB is an N-Channel MOSFET designed by VBsemi for low voltage and high current applications. Using Trench technology, it has low on-resistance and high current capability, suitable for circuit designs that require high performance and high stability.
**Features:**
- **Drain-Source Voltage (VDS):** 30V
- **Gate-Source Voltage (VGS):** ±20V
- **Threshold Voltage (Vth):** 1.7V
- **On-Resistance (RDS(ON)):** 9mΩ @ VGS = 4.5V, 7mΩ @ VGS = 10V
- **Continuous Drain Current (ID):** 70A
- **Technology:** Trench
- **Package:** TO252
- **Configuration:** Single N-Channel
**Introduction: **
2SK1468-VB is an N-Channel MOSFET designed by VBsemi for low voltage and high current applications. Using Trench technology, it has low on-resistance and high current capability, suitable for circuit designs that require high performance and high stability.
**Features:**
- **Drain-Source Voltage (VDS):** 30V
- **Gate-Source Voltage (VGS):** ±20V
- **Threshold Voltage (Vth):** 1.7V
- **On-Resistance (RDS(ON)):** 9mΩ @ VGS = 4.5V, 7mΩ @ VGS = 10V
- **Continuous Drain Current (ID):** 70A
- **Technology:** Trench
- **Package:** TO252
- **Configuration:** Single N-Channel
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 30V | 1.7V | 70A | 9mΩ | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Detailed Specifications
1. **Electrical Characteristics:**
- **Maximum Drain-Source Voltage (VDS):** 30V
- **Maximum Gate-Source Voltage (VGS):** ±20V
- **Threshold Voltage (Vth):** 1.7V
- **On-Resistance (RDS(ON)):** 9mΩ @ VGS = 4.5V, 7mΩ @ VGS = 10V
- **Continuous Drain Current (ID):** 70A
2. **Thermal and Mechanical Characteristics:**
- **Package Type:** TO252
- **Junction-to-Ambient Thermal Resistance:** Thermal resistance of standard TO252 package
- **Maximum Junction Temperature (Tj):** Specified by manufacturer
3. **Performance Characteristics:**
- **Technology:** Trench
- **Gate charge (Qg): **Typical value based on VGS and ID
- **Input capacitance (Ciss): **Typical value for high frequency operation
Domain and module applications：
### Application Examples
1. **Power Management:**
2SK1468-VB is suitable for low voltage and high current power management systems such as battery management, power switches and regulators. Its low on-resistance and high current capability make it excellent in high-efficiency power management.
2. **Automotive Electronics:**
In the field of automotive electronics, this MOSFET can be used to drive motors, lights and other high current devices. Its high current capability and low on-resistance make it an ideal choice for automotive electronic systems.
3. **Industrial Control Systems:**
In industrial control systems, 2SK1468-VB can be used to control switches and current controllers. Its high current and high stability make it an indispensable component in industrial equipment.
In summary, VBsemi's 2SK1468-VB MOSFET is an N-Channel MOSFET suitable for low-voltage and high-current applications, with low on-resistance and high current capability, suitable for power management, automotive electronics, industrial control and other fields. Its high performance and high stability make it an ideal choice for a variety of applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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