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2SK1459LS-VB Product details
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### Product Introduction
**Model: 2SK1459LS-VB**
2SK1459LS-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO-220F package. This product has high drain voltage and moderate on-resistance, suitable for applications requiring higher drain voltage and low power. It uses Plannar technology and has good electrical characteristics and reliability.
**Model: 2SK1459LS-VB**
2SK1459LS-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO-220F package. This product has high drain voltage and moderate on-resistance, suitable for applications requiring higher drain voltage and low power. It uses Plannar technology and has good electrical characteristics and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 950V | 3.5V | 3A | 5400mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 950V | 3.5V | 3A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 950V | 3.5V | 3A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Detailed parameter description
- **Package:** TO-220F
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 950V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 5400mΩ @ VGS=10V
- **Drain current (ID):** 3A
- **Technology:** Plannar
- **Package:** TO-220F
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 950V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 5400mΩ @ VGS=10V
- **Drain current (ID):** 3A
- **Technology:** Plannar
Domain and module applications：
### Application fields and module examples
**1. Power electronic converter: **
2SK1459LS-VB is suitable for power switches in power electronic converters that require higher drain voltages. Its moderate on-resistance and high drain voltage can provide stable power conversion and high efficiency.
**2. HVDC transmission system: **
In HVDC transmission systems, this MOSFET can be used for power switches and regulators. Its high drain voltage and moderate on-resistance help improve energy conversion efficiency and system stability.
**3. Power module: **
2SK1459LS-VB is suitable for power switches in power modules that require higher drain voltages. Its high drain voltage and moderate on-resistance help improve energy conversion efficiency and system stability.
**4. Medical equipment: **
In medical equipment, this model can be used for power switches and regulators in high-voltage power management modules. Its high drain voltage and moderate on-resistance can ensure efficient operation and reliability of the equipment.
Through the above application examples, it can be seen that the 2SK1459LS-VB MOSFET is widely applicable in fields requiring higher drain voltage and low power requirements, reflecting its importance in modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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