Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO247 |
Single-N |
700V |
30（±V） |
3.2V |
2A |
|
|
6500 (mΩ) |
Plannar |
Detailed parameter description:
- Brand: VBsemi
- Product model: VBP17R02
- Type: Single N-channel power MOSFET
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.2V
- On-resistance (m次) at VGS=10V: 6500m次
- Maximum drain current (ID): 2A
- Technology: Plannar
-Package:TO247
Domain and module applications：
Examples of applicable fields and modules:
1. High-voltage DC power transmission system: VBP17R02 can be used in inverters and switching power supply modules in high-voltage DC power transmission systems to realize the conversion and distribution of DC power.
2. Automobile electrification system: In the automobile electrification system, this product is suitable for the motor driver and battery management module of electric vehicles, providing high-efficiency power control and protection functions.
3. Industrial automation equipment: used in power modules and drivers in industrial automation equipment to ensure stable operation and high-efficiency conversion of the equipment.
4. Solar inverter: VBP17R02 can be used in solar inverters to convert DC power generated by solar panels into AC power to achieve high-efficiency conversion of solar power generation systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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