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2SK1447LS-VB Product details
Back to previous pageProduct introduction：
### 1. 2SK1447LS-VB Product Introduction
2SK1447LS-VB is a single N-channel MOSFET, packaged in TO220F, manufactured based on Plannar technology. This model has a high drain-source voltage and moderate on-resistance, suitable for circuit designs requiring high withstand voltage and medium power. Its maximum drain-source voltage (VDS) is 550V, the maximum gate-source voltage (VGS) is ±30V, the threshold voltage (Vth) is 3V, the on-resistance (RDS(ON)) is 260mΩ at VGS=10V, and the maximum drain current (ID) is 18A.
2SK1447LS-VB is a single N-channel MOSFET, packaged in TO220F, manufactured based on Plannar technology. This model has a high drain-source voltage and moderate on-resistance, suitable for circuit designs requiring high withstand voltage and medium power. Its maximum drain-source voltage (VDS) is 550V, the maximum gate-source voltage (VGS) is ±30V, the threshold voltage (Vth) is 3V, the on-resistance (RDS(ON)) is 260mΩ at VGS=10V, and the maximum drain current (ID) is 18A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### 2. 2SK1447LS-VB Detailed parameter description
- **Model**: 2SK1447LS-VB
- **Package**: TO220F
- **Type**: Single N-channel
- **Technology**: Plannar
- **Maximum drain-source voltage (VDS)**: 550V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 260mΩ @ VGS=10V
- **Maximum drain current (ID)**: 18A
- **Turning-on delay time**: < 10ns
- **Turning-off delay time**: < 20ns
- **Total gate charge (Qg)**: 80nC
- **Gate-drain charge (Qgd)**: 15nC
- **Drain-source charge (Qgs)**: 30nC
- **Thermal resistance (RθJC)**: 1.4°C/W
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
### 3. Application fields and module examples
#### Power management module
2SK1447LS-VB can be used to design medium-power power management modules, such as switching power supplies, inverters, etc., suitable for industrial and consumer electronic devices.
#### Lighting driver
In LED lighting drivers, this model can be used to design efficient LED driver circuits, providing stable current output and high-efficiency energy conversion.
#### Electric vehicle charging pile
In electric vehicle charging piles, 2SK1447LS-VB can be used to design power output modules to achieve efficient charging management of electric vehicles.
#### Solar inverter
In solar power generation systems, this model can be used to design solar inverters to convert DC power generated by solar panels into AC power to achieve access to the power grid.
#### Industrial Power System
In industrial power systems, 2SK1447LS-VB can be used to design industrial UPS, inverter and other modules to provide efficient power conversion and stable power output.
In summary, 2SK1447LS-VB is an N-channel MOSFET suitable for medium power circuit design, with high drain-source voltage and moderate on-resistance, suitable for a variety of electronic devices and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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