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2SK1446LS-VB Product details
Back to previous pageProduct introduction：
### 1. 2SK1446LS-VB Product Introduction
VBsemi's 2SK1446LS-VB is a high-voltage single N-channel MOSFET manufactured using Plannar technology. The device is packaged in a TO-220F package and has a high drain-source voltage and moderate current handling capability, making it suitable for power management and switching applications that need to withstand high voltages and moderate currents. Its features include a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, ensuring stable operation in various high-voltage circuits.
VBsemi's 2SK1446LS-VB is a high-voltage single N-channel MOSFET manufactured using Plannar technology. The device is packaged in a TO-220F package and has a high drain-source voltage and moderate current handling capability, making it suitable for power management and switching applications that need to withstand high voltages and moderate currents. Its features include a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, ensuring stable operation in various high-voltage circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### 2. Detailed parameter description of 2SK1446LS-VB
- **Model**: 2SK1446LS-VB
- **Package type**: TO-220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 680mΩ @ VGS=10V
- **Drain current (ID)**: 12A
- **Technology**: Plannar
- **Model**: 2SK1446LS-VB
- **Package type**: TO-220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 680mΩ @ VGS=10V
- **Drain current (ID)**: 12A
- **Technology**: Plannar
Domain and module applications：
### 3. Application fields and module examples
1. **Power management**: Due to its high drain-source voltage and moderate on-resistance, 2SK1446LS-VB is suitable for switching elements in high-voltage power management systems. It can be used in power management modules in industrial power supplies, UPS power supplies and other fields.
2. **Electric vehicle charging pile**: In the charging pile of electric vehicles, high-performance switching devices are required to control the output current and voltage of the charging pile. The characteristics of 2SK1446LS-VB make it an ideal choice for such applications.
3. **Industrial control system**: This MOSFET is suitable for various industrial control systems such as PLC, motor drives, etc. Its high performance and reliability make it an ideal choice in industrial environments, enabling effective power and signal control in industrial equipment and automation systems.
In summary, 2SK1446LS-VB is suitable for power management and switching applications that require high voltage and moderate current handling capabilities. Its characteristics give it broad application prospects in industrial power supplies, electric vehicle charging piles, and industrial control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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