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2SK1445LS-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Model: 2SK1445LS-VB**
2SK1445LS-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO-220F package. With high drain voltage and moderate on-resistance, it is suitable for applications requiring medium power and high efficiency. It adopts Plannar technology and has good electrical characteristics and reliability.
**Model: 2SK1445LS-VB**
2SK1445LS-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO-220F package. With high drain voltage and moderate on-resistance, it is suitable for applications requiring medium power and high efficiency. It adopts Plannar technology and has good electrical characteristics and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Detailed parameter description
- **Package:** TO-220F
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 1100mΩ @ VGS=10V
- **Drain current (ID):** 7A
- **Technology:** Plannar
- **Package:** TO-220F
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 1100mΩ @ VGS=10V
- **Drain current (ID):** 7A
- **Technology:** Plannar
Domain and module applications：
### Application fields and module examples
**1. Power electronic converter: **
2SK1445LS-VB is suitable for power switches in medium-power power electronic converters. Its moderate on-resistance and high drain voltage can provide stable power conversion and high efficiency.
**2. Power module: **
In power modules, this MOSFET can be used for power switches and regulators. Its high drain voltage and moderate on-resistance help improve energy conversion efficiency and system stability.
**3. Industrial automation equipment: **
2SK1445LS-VB is suitable for power switches and regulators in industrial automation equipment. Its high drain current and moderate on-resistance can improve the efficiency and response speed of the equipment.
**4. LED lighting driver: **
In LED lighting drivers, this model can be used for power switches and current regulators. Its low on-resistance and high drain voltage can improve the efficiency and stability of LED lighting systems.
Through the above application examples, we can see that the 2SK1445LS-VB MOSFET is widely applicable in the field of medium power and high efficiency requirements, reflecting its importance in modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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