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2SK1430-VB Product details
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### 1. 2SK1430-VB Product Introduction
VBsemi's 2SK1430-VB is a high-performance single N-channel MOSFET manufactured using Trench technology. The device is packaged in a TO-220F package and has medium-to-high drain-source voltage and high current handling capabilities, making it suitable for power management and switching applications that need to withstand medium-to-high voltage and high current. Its features include a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, ensuring stable operation in a variety of circuits.
VBsemi's 2SK1430-VB is a high-performance single N-channel MOSFET manufactured using Trench technology. The device is packaged in a TO-220F package and has medium-to-high drain-source voltage and high current handling capabilities, making it suitable for power management and switching applications that need to withstand medium-to-high voltage and high current. Its features include a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, ensuring stable operation in a variety of circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 100V | 1.8V | 18A | 86mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 100V | 1.8V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 100V | 1.8V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### 2. Detailed parameter description of 2SK1430-VB
- **Model**: 2SK1430-VB
- **Package type**: TO-220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 86mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology**: Trench
Domain and module applications：
### 3. Application fields and module examples
1. **Power management**: Due to its medium-to-high drain-source voltage and low on-resistance, the 2SK1430-VB is suitable for switching elements in medium-to-high voltage power management systems. It can be used in power management modules in the fields of computer power supply, server power supply, etc.
2. **Electric vehicles**: In the motor control of electric vehicles, high-performance switching devices are required to control the start and stop and speed regulation of the motor. The characteristics of the 2SK1430-VB make it an ideal choice for such applications, especially for battery management and charging systems for electric vehicles.
3. **Industrial control systems**: This MOSFET is suitable for various industrial control systems such as PLC, motor drives, etc. Its high performance and reliability make it an ideal choice in industrial environments, enabling effective power and signal control in industrial equipment and automation systems.
In summary, the 2SK1430-VB is suitable for power management and switching applications that require medium-to-high voltage and high current handling capabilities. Its characteristics give it broad application prospects in fields such as computer power supplies, electric vehicles and industrial control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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