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2SK1420-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Product Model: 2SK1420-VB**
**Package Type: TO220F**
**Configuration: Single N-channel**
**Technology: Trench**
**Main Features:**
- **VDS (drain-source voltage): ** 60V
- **VGS (gate-source voltage): ** ±20V
- **Vth (threshold voltage): ** 1.7V
- **RDS(ON) (on-resistance): ** 27mΩ@VGS=10V
- **ID (drain current): ** 45A
2SK1420-VB is a low voltage N-channel MOSFET for medium power applications.
**Product Model: 2SK1420-VB**
**Package Type: TO220F**
**Configuration: Single N-channel**
**Technology: Trench**
**Main Features:**
- **VDS (drain-source voltage): ** 60V
- **VGS (gate-source voltage): ** ±20V
- **Vth (threshold voltage): ** 1.7V
- **RDS(ON) (on-resistance): ** 27mΩ@VGS=10V
- **ID (drain current): ** 45A
2SK1420-VB is a low voltage N-channel MOSFET for medium power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 60V | 1.7V | 45A | 27mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Parameter Description
1. **Basic parameters:**
- **Model:** 2SK1420-VB
- **Package type:** TO220F
- **Configuration:** Single N-channel
- **Technology:** Trench
2. **Electrical characteristics:**
- **Drain-source voltage (VDS):** 60V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
3. **On-resistance (RDS(ON)):**
- **@ VGS=10V:** 27mΩ
4. **Drain current (ID):** 45A
5. **Other characteristics:**
- **Maximum power dissipation:** 156W
- **Operating temperature range:** -55°C to 150°C
Domain and module applications：
### Applications and Modules
1. **Power Management:**
Due to the moderate drain-source voltage and low on-resistance, 2SK1420-VB is suitable for various medium-power power management applications, such as power adapters, switching power supplies, etc.
2. **Motor Drive:**
In applications where the motor needs to be driven efficiently, this MOSFET can be used in motor drivers and control circuits to ensure efficient operation of the motor.
3. **Electric Vehicle Charging Pile:**
In the power control circuit of the electric vehicle charging pile, this MOSFET can be used for switching power supplies and power conversion to ensure efficient energy conversion and stable current output.
4. **Industrial Control:**
In industrial control equipment, this MOSFET can be used in power switches and control circuits to provide efficient current control and management.
In summary, 2SK1420-VB is a low-voltage N-channel MOSFET suitable for medium-power applications, which can be widely used in power management, motor drive, electric vehicle charging piles and industrial control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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