中文
English
2SK1404-VB Product details
Back to previous pageProduct introduction：
### 1. 2SK1404-VB Product Introduction
VBsemi's 2SK1404-VB is a high-voltage single N-channel MOSFET manufactured using Plannar technology. The device is packaged in a TO-220F package and has a high drain-source voltage and moderate current handling capability, making it suitable for power management and switching applications that need to withstand high voltages and moderate currents. Its features include a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, ensuring stable operation in various high-voltage circuits.
VBsemi's 2SK1404-VB is a high-voltage single N-channel MOSFET manufactured using Plannar technology. The device is packaged in a TO-220F package and has a high drain-source voltage and moderate current handling capability, making it suitable for power management and switching applications that need to withstand high voltages and moderate currents. Its features include a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, ensuring stable operation in various high-voltage circuits.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### 2. Detailed parameter description of 2SK1404-VB
- **Model**: 2SK1404-VB
- **Package type**: TO-220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology**: Plannar
Domain and module applications：
### 3. Application fields and module examples
1. **Power management**: Due to its high drain-source voltage and moderate on-resistance, 2SK1404-VB is suitable for switching elements in high-voltage power management systems. It can be used for power management in electric vehicle charging piles, industrial power supplies and other fields.
2. **Industrial control systems**: In industrial control systems, switching devices with high voltage and moderate current handling capabilities are required to control various industrial equipment. The characteristics of 2SK1404-VB make it an ideal choice for such applications.
3. **Electric vehicle charging piles**: This MOSFET is suitable for power switches in electric vehicle charging piles, ensuring stable operation under high voltage environments. Its high performance and reliability make it an ideal choice for electric vehicle charging piles.
In summary, 2SK1404-VB is suitable for power management and switching applications that require high voltage and moderate current handling capabilities. Its characteristics make it have broad application prospects in electric vehicle charging piles, industrial control systems and power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
