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2SK1403A-VB Product details
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### Product Introduction
**Model: 2SK1403A-VB**
2SK1403A-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO-3P package. This product has high drain voltage and moderate on-resistance, suitable for applications requiring medium power and high efficiency. It adopts SJ_Multi-EPI technology and has good electrical characteristics and reliability.
**Model: 2SK1403A-VB**
2SK1403A-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO-3P package. This product has high drain voltage and moderate on-resistance, suitable for applications requiring medium power and high efficiency. It adopts SJ_Multi-EPI technology and has good electrical characteristics and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 650V | 3.5V | 11A | 420mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### Detailed parameter description
- **Package:** TO-3P
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 420mΩ @ VGS=10V
- **Drain current (ID):** 11A
- **Technology:** SJ_Multi-EPI
- **Package:** TO-3P
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 420mΩ @ VGS=10V
- **Drain current (ID):** 11A
- **Technology:** SJ_Multi-EPI
Domain and module applications：
### Application fields and module examples
**1. Power electronic converters: **
2SK1403A-VB is suitable for power electronic converters that require medium and high power conversion. Its moderate on-resistance and high drain voltage can provide high efficiency and stability.
**2. High-performance power modules: **
In high-performance power modules, this MOSFET can be used for power switches and regulators. Its high drain voltage and moderate on-resistance help improve energy conversion efficiency and system stability.
**3. Industrial motor drives: **
2SK1403A-VB can be applied to power switches and current regulators in industrial motor drives. Its high drain current and moderate on-resistance can improve the efficiency and response speed of the equipment.
**4. HVDC transmission system: **
This model is suitable for power switches and regulators in HVDC transmission systems. Its high drain voltage and moderate on-resistance help improve energy conversion efficiency and system stability.
The above application examples demonstrate the wide applicability of 2SK1403A-VB MOSFET in the field of medium power and high efficiency requirements, reflecting its importance in modern electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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