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2SK1399-T2B-A-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Model**: 2SK1399-T2B-A-VB
**Package**: SOT23-3
**Configuration**: Single N-channel MOSFET
**Technology**: Trench type
2SK1399-T2B-A-VB is a low-voltage, low-power single N-channel MOSFET in SOT23-3 package. It adopts trench technology, has low drain voltage and moderate on-resistance, and is suitable for low-voltage, low-power applications.
**Model**: 2SK1399-T2B-A-VB
**Package**: SOT23-3
**Configuration**: Single N-channel MOSFET
**Technology**: Trench type
2SK1399-T2B-A-VB is a low-voltage, low-power single N-channel MOSFET in SOT23-3 package. It adopts trench technology, has low drain voltage and moderate on-resistance, and is suitable for low-voltage, low-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | 3100mΩ | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
### Detailed parameter description
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Drain current (ID)**: 0.3A
- **Package type**: SOT23-3
- **Operating temperature range**: -55°C to 150°C
- **Power consumption (Ptot)**: 0.6W
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Drain current (ID)**: 0.3A
- **Package type**: SOT23-3
- **Operating temperature range**: -55°C to 150°C
- **Power consumption (Ptot)**: 0.6W
Domain and module applications：
### Applications and module examples
2SK1399-T2B-A-VB MOSFET is suitable for low voltage and low power applications. Here are some specific application areas and module examples:
1. **Power management**:
- Used as a switching device in low power switching power supplies to achieve efficient power conversion.
- Suitable for power management systems of portable electronic devices and low power electronic products.
2. **Signal switch**:
- Used to control the on and off of signals in low power signal switching circuits.
- Suitable for signal switching modules of low power audio equipment and communication equipment.
3. **Analog circuit**:
- Used for voltage control and signal conditioning in low power analog circuits.
- Suitable for low power sensors and analog control systems.
4. **Electronic switch**:
- Used to realize the switching control of electronic devices in low power electronic switching circuits.
- Suitable for low-power electronic devices and electronic toys.
5. **LED lighting**:
- Used as a switching device in low-power LED drivers to drive low-power LED lighting systems.
- Suitable for indoor and outdoor low-power lighting systems, providing energy-saving lighting solutions.
The low voltage and low power characteristics of 2SK1399-T2B-A-VB make it an ideal choice for a variety of low-power applications, providing stable and reliable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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