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2SK1399-T1B-A-VB Product details
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### 2SK1399-T1B-A-VB Product Introduction
2SK1399-T1B-A-VB is a single N-channel MOSFET in SOT23-3 package. It has a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of 20V (±V), a threshold voltage (Vth) of 1.7V, and adopts Trench technology, which is suitable for low-power applications.
2SK1399-T1B-A-VB is a single N-channel MOSFET in SOT23-3 package. It has a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of 20V (±V), a threshold voltage (Vth) of 1.7V, and adopts Trench technology, which is suitable for low-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | 3100mΩ | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
### 2SK1399-T1B-A-VB Detailed parameter description
- **Model: 2SK1399-T1B-A-VB**
- **Package: SOT23-3**
- **Polarity: Single N-channel**
- **Drain-source voltage (VDS): 60V**
- **Gate-source voltage (VGS): ±20V**
- **Threshold voltage (Vth): 1.7V**
- **On-resistance (RDS(ON)):**
- 3100mΩ @ VGS=4.5V
- 2800mΩ @ VGS=10V
- **Drain current (ID): 0.3A**
- **Technology: Trench**
- **Model: 2SK1399-T1B-A-VB**
- **Package: SOT23-3**
- **Polarity: Single N-channel**
- **Drain-source voltage (VDS): 60V**
- **Gate-source voltage (VGS): ±20V**
- **Threshold voltage (Vth): 1.7V**
- **On-resistance (RDS(ON)):**
- 3100mΩ @ VGS=4.5V
- 2800mΩ @ VGS=10V
- **Drain current (ID): 0.3A**
- **Technology: Trench**
Domain and module applications：
### Applicable fields and modules
1. **Mobile devices**
- **Application examples**: Due to its low on-resistance and low power characteristics, 2SK1399-T1B-A-VB is suitable for power management and circuit control in mobile devices.
2. **Low-power electronic devices**
- **Application examples**: In various low-power electronic devices, such as electronic toys, portable computers, etc., 2SK1399-T1B-A-VB can be used as a switching element to ensure high performance and long life of the equipment.
3. **Sensor interface**
- **Application examples**: In sensor interface circuits, 2SK1399-T1B-A-VB can be used as a switching element to ensure stable communication between sensors and controllers.
4. **Medical Equipment**
- **Application Examples**: In low-power medical devices, such as portable monitors, medical sensors, etc., 2SK1399-T1B-A-VB can be used as a key component to ensure the reliability and stability of the equipment.
Through these application examples, we can see the wide application of 2SK1399-T1B-A-VB in low-power electronic devices and circuits, demonstrating its importance and practicality in the field of low-power management and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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