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2SK1387-MR-VB Product details
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### 1. 2SK1387-MR-VB Product Introduction
VBsemi's 2SK1387-MR-VB is a low-voltage single N-channel MOSFET manufactured using Trench technology. The device is packaged in a TO-220F package and has low drain-source voltage and current handling capabilities, making it suitable for power management and switching applications that need to withstand lower voltages and currents. Its features include a 60V drain-source voltage (VDS) and a ±20V gate-source voltage (VGS), ensuring stable operation in a variety of low-voltage circuits.
VBsemi's 2SK1387-MR-VB is a low-voltage single N-channel MOSFET manufactured using Trench technology. The device is packaged in a TO-220F package and has low drain-source voltage and current handling capabilities, making it suitable for power management and switching applications that need to withstand lower voltages and currents. Its features include a 60V drain-source voltage (VDS) and a ±20V gate-source voltage (VGS), ensuring stable operation in a variety of low-voltage circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 60V | 1.7V | 45A | 27mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### 2. Detailed parameter description of 2SK1387-MR-VB
- **Model**: 2SK1387-MR-VB
- **Package type**: TO-220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 27mΩ @ VGS=10V
- **Drain current (ID)**: 45A
- **Technology**: Trench
Domain and module applications：
### 3. Application fields and module examples
1. **Power management**: Due to its low drain-source voltage and low on-resistance, the 2SK1387-MR-VB is suitable for switching elements in low-voltage power management systems. It can be used in mobile device chargers, battery management systems, etc.
2. **Electric vehicles**: In the motor control of electric vehicles, high-performance switching devices are required to control the start and stop and speed regulation of the motor. The characteristics of the 2SK1387-MR-VB make it an ideal choice for such applications.
3. **Industrial control systems**: This MOSFET is suitable for various industrial control systems such as PLC, motor drives, etc. Its high performance and reliability make it an ideal choice for industrial environments.
In summary, the 2SK1387-MR-VB is suitable for power management and switching applications that require low voltage and current handling capabilities. Its characteristics make it have broad application prospects in fields such as mobile devices, electric vehicles, and industrial control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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