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2SK1342-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Model**: 2SK1342-VB
**Package**: TO3P
**Configuration**: Single N-channel MOSFET
**Technology**: SJ_Multi-EPI
2SK1342-VB is a high voltage, medium power single N-channel MOSFET in TO3P package. Using SJ_Multi-EPI technology, it has high voltage withstand capability and moderate on-resistance, suitable for applications that need to operate under high voltage conditions and have medium power requirements.
**Model**: 2SK1342-VB
**Package**: TO3P
**Configuration**: Single N-channel MOSFET
**Technology**: SJ_Multi-EPI
2SK1342-VB is a high voltage, medium power single N-channel MOSFET in TO3P package. Using SJ_Multi-EPI technology, it has high voltage withstand capability and moderate on-resistance, suitable for applications that need to operate under high voltage conditions and have medium power requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### Detailed parameter description
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 750mΩ @ VGS = 10V
- **Drain current (ID)**: 9A
- **Package type**: TO3P
- **Operating temperature range**: -55°C to 150°C
- **Power consumption (Ptot)**: 75W
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 750mΩ @ VGS = 10V
- **Drain current (ID)**: 9A
- **Package type**: TO3P
- **Operating temperature range**: -55°C to 150°C
- **Power consumption (Ptot)**: 75W
Domain and module applications：
### Applications and Module Examples
2SK1342-VB MOSFET is suitable for high voltage, medium power applications. Here are some specific application areas and module examples:
1. **Power Management**:
- Used as the main switch device in the switch mode power supply (SMPS) to achieve efficient power conversion.
- Suitable for medium power DC-DC converters to improve conversion efficiency.
2. **Motor Drive**:
- Used for motor control in medium power motor drives to provide stable current output.
- Suitable for drive circuits of medium power electric vehicles and industrial equipment.
3. **Battery Management**:
- Used to manage the charge and discharge process of the battery in medium power charge and discharge control circuits to ensure battery safety and long life.
- Suitable for battery management systems for medium power power tools and portable electronic devices.
4. **Electronic switch**:
- Used in medium power electronic switch circuits to realize the switch control of electronic equipment.
- Suitable for medium power electronic equipment and industrial automation control systems.
5. **Power inverter**:
- Used as a switching device in medium power inverters to convert DC to AC.
- Suitable for solar inverters and inverter systems for industrial use.
The high voltage withstand capability and medium power characteristics of 2SK1342-VB make it an ideal choice for a variety of high voltage and medium power applications, and can provide stable and reliable performance in complex working environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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