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2SK1339-VB Product details
Back to previous pageProduct introduction：
### 1. 2SK1339-VB Product Introduction
2SK1339-VB is a single N-channel MOSFET in TO3P package. This model is manufactured using SJ_Multi-EPI technology, has a high drain-source voltage and moderate on-resistance, and is suitable for medium and high power circuit design. Its maximum drain-source voltage (VDS) is 900V, the maximum gate-source voltage (VGS) is ±30V, the threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 750mΩ at VGS=10V, and the maximum drain current (ID) is 9A.
2SK1339-VB is a single N-channel MOSFET in TO3P package. This model is manufactured using SJ_Multi-EPI technology, has a high drain-source voltage and moderate on-resistance, and is suitable for medium and high power circuit design. Its maximum drain-source voltage (VDS) is 900V, the maximum gate-source voltage (VGS) is ±30V, the threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 750mΩ at VGS=10V, and the maximum drain current (ID) is 9A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### 2. 2SK1339-VB Detailed parameter description
- **Model**: 2SK1339-VB
- **Package**: TO3P
- **Type**: Single N-channel
- **Technology**: SJ_Multi-EPI
- **Maximum drain-source voltage (VDS)**: 900V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS=10V
- **Maximum drain current (ID)**: 9A
- **Turning on delay time**: < 10ns
- **Turning off delay time**: < 20ns
- **Total gate charge (Qg)**: 56nC
- **Gate-drain charge (Qgd)**: 16nC
- **Drain-source charge (Qgs)**: 40nC
- **Thermal resistance (RθJC)**: 0.83°C/W
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
### 3. Application fields and module examples
#### High-voltage power supply module
2SK1339-VB can be used to design high-voltage power supply modules, such as high-voltage regulators and high-voltage switching power supplies in industrial equipment, and is suitable for occasions requiring high voltage and high power.
#### High-power motor driver
Due to its higher drain current and lower on-resistance, this model is suitable for designing high-power motor drivers, such as motor drivers for electric vehicles, industrial high-power motor control systems, etc.
#### Solar inverter
In solar power generation systems, 2SK1339-VB can be used in inverter circuits to help achieve efficient conversion and management of solar power.
#### High-performance power amplifier
In high-performance power amplifiers such as audio amplifiers, this model can be used in power amplifier circuits to provide high-fidelity and low-distortion power amplification.
#### High Voltage Lighting System
In situations where high voltage LED lighting systems need to be designed, such as street lighting, car lighting, etc., 2SK1339-VB can provide high efficiency and reliability solutions.
In summary, 2SK1339-VB is a high performance MOSFET component suitable for medium and high power circuit design, with a wide range of application prospects, and can be used in a variety of electronic devices and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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