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2SK1335-VB Product details
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### 1. 2SK1335-VB Product Introduction
VBsemi's 2SK1335-VB is a high-voltage single N-channel MOSFET manufactured using Trench technology. The device is packaged in a TO-251 package and has a high drain-source voltage and moderate current handling capability, making it suitable for power management and switching applications that need to withstand high voltages and moderate currents. Its features include a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V, ensuring stable operation in various high-voltage circuits.
### 2. Detailed parameter description of 2SK1335-VB
- **Model**: 2SK1335-VB
- **Package type**: TO-251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 270mΩ @ VGS=10V
- **Drain current (ID)**: 8A
- **Technology**: Trench
### 3. Application areas and module examples
1. **Power management**: Due to its high drain-source voltage and moderate on-resistance, 2SK1335-VB is suitable for switching elements in high-voltage power management systems. It can be used for power management in the fields of electric vehicle charging piles, industrial power supplies, etc.
2. **Medical equipment**: In medical equipment, switching devices with high voltage and moderate current handling capabilities are required to control the start and stop and function adjustment of the equipment. The characteristics of 2SK1335-VB make it an ideal choice for such applications.
3. **Industrial automation**: This MOSFET is suitable for various control systems in the field of industrial automation, such as PLC, sensor control, etc. Its stability and reliability make it an ideal choice for industrial environments.
In summary, 2SK1335-VB is suitable for power management and switching applications that require high voltage and moderate current handling capabilities. Its characteristics give it broad application prospects in the fields of electric vehicle charging piles, medical equipment, and industrial automation.
VBsemi's 2SK1335-VB is a high-voltage single N-channel MOSFET manufactured using Trench technology. The device is packaged in a TO-251 package and has a high drain-source voltage and moderate current handling capability, making it suitable for power management and switching applications that need to withstand high voltages and moderate currents. Its features include a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V, ensuring stable operation in various high-voltage circuits.
### 2. Detailed parameter description of 2SK1335-VB
- **Model**: 2SK1335-VB
- **Package type**: TO-251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 270mΩ @ VGS=10V
- **Drain current (ID)**: 8A
- **Technology**: Trench
### 3. Application areas and module examples
1. **Power management**: Due to its high drain-source voltage and moderate on-resistance, 2SK1335-VB is suitable for switching elements in high-voltage power management systems. It can be used for power management in the fields of electric vehicle charging piles, industrial power supplies, etc.
2. **Medical equipment**: In medical equipment, switching devices with high voltage and moderate current handling capabilities are required to control the start and stop and function adjustment of the equipment. The characteristics of 2SK1335-VB make it an ideal choice for such applications.
3. **Industrial automation**: This MOSFET is suitable for various control systems in the field of industrial automation, such as PLC, sensor control, etc. Its stability and reliability make it an ideal choice for industrial environments.
In summary, 2SK1335-VB is suitable for power management and switching applications that require high voltage and moderate current handling capabilities. Its characteristics give it broad application prospects in the fields of electric vehicle charging piles, medical equipment, and industrial automation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 200V | 3V | 8A | 270mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 200V | 3V | 8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 200V | 3V | 8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel |
Domain and module applications：
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
