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2SK1335S-VB Product details
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### Product Introduction
**Model: 2SK1335S-VB**
2SK1335S-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO-252 package. This product has a high drain voltage and moderate on-resistance, suitable for applications requiring medium power and high efficiency. It uses Trench technology and has good electrical characteristics and reliability.
**Model: 2SK1335S-VB**
2SK1335S-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO-252 package. This product has a high drain voltage and moderate on-resistance, suitable for applications requiring medium power and high efficiency. It uses Trench technology and has good electrical characteristics and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Detailed parameter description
- **Package:** TO-252
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 200V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3V
- **On-resistance (RDS(ON)):** 245mΩ @ VGS=10V
- **Drain current (ID):** 10A
- **Technology:** Trench
- **Package:** TO-252
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 200V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3V
- **On-resistance (RDS(ON)):** 245mΩ @ VGS=10V
- **Drain current (ID):** 10A
- **Technology:** Trench
Domain and module applications：
### Application fields and module examples
**1. Automotive electronic systems: **
2SK1335S-VB is suitable for power switches and voltage regulators in automotive electronic systems. Its high drain voltage and moderate on-resistance can provide stable power output.
**2. Industrial control systems: **
In industrial control systems, this MOSFET can be used for power switches and current regulators. Its high drain voltage and moderate on-resistance can improve the efficiency and reliability of equipment.
**3. High-voltage DC transmission systems: **
2SK1335S-VB can be applied to power switches and regulators in high-voltage DC transmission systems. Its high drain voltage and moderate on-resistance help improve energy conversion efficiency and system stability.
**4. Industrial control power modules: **
This model is suitable for power switches and voltage regulators in industrial control power modules. Its high drain voltage and moderate on-resistance can provide stable power output.
The above application examples demonstrate the wide applicability of 2SK1335S-VB MOSFET in the field of medium power and high efficiency requirements, reflecting its importance in modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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