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2SK1335STL-E-VB Product details
Back to previous pageProduct introduction：
### 1. Product Introduction
**Model: 2SK1335STL-E-VB**
2SK1335STL-E-VB is a high-performance single N-channel MOSFET produced by VBsemi, using TO252 package. The device has high withstand voltage, low on-resistance and appropriate current handling capability, and is suitable for the design of a variety of electronic devices and modules requiring high power and high efficiency.
**Model: 2SK1335STL-E-VB**
2SK1335STL-E-VB is a high-performance single N-channel MOSFET produced by VBsemi, using TO252 package. The device has high withstand voltage, low on-resistance and appropriate current handling capability, and is suitable for the design of a variety of electronic devices and modules requiring high power and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### 2. Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 245mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 245mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology**: Trench
Domain and module applications：
### 3. Application fields and module examples
2SK1335STL-E-VB has high withstand voltage, low on-resistance and appropriate current handling capability, and is suitable for the design of a variety of electronic devices and modules that require high power and high efficiency.
1. **Power supply**:
- **Switching power supply**: In high-power switching power supplies, 2SK1335STL-E-VB can be used for efficient power switches to provide stable voltage output.
- **Inverter**: In high-power inverters, the device can be used to convert DC power to AC power for various high-power applications.
2. **Electric vehicle charger**:
- In electric vehicle chargers, 2SK1335STL-E-VB can be used to control the battery charging and discharging process to ensure charging efficiency and battery life.
3. **Industrial Control**:
- **Motor Drive**: In industrial motor drive systems, the device can be used to drive high-power motors, providing efficient energy conversion and low losses.
- **Power Management**: In industrial power management systems, the 2SK1335STL-E-VB can be used for stable power output and power switch control.
4. **Power Transmission**:
- **Power Inverter**: In power inverters, the device can be used to convert DC power to AC power for power transmission and control.
5. **Medical Equipment**:
- **High-Power Medical Equipment**: In high-power medical equipment, the 2SK1335STL-E-VB can be used to drive high-power devices and process signals to achieve efficient and reliable medical equipment functions.
2SK1335STL-E-VB is a high-performance, high-power MOSFET suitable for the design of a variety of high-power electronic devices and systems, providing efficient and reliable solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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