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2SK1316-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Product Model: 2SK1316-VB**
**Package Type: TO252**
**Configuration: Single N-channel**
**Technology: SJ_Multi-EPI**
**Main Features:**
- **VDS (drain-source voltage): ** 650V
- **VGS (gate-source voltage): ** ±30V
- **Vth (threshold voltage): ** 3.5V
- **RDS(ON) (on-resistance): ** 700mΩ@VGS=10V
- **ID (drain current): ** 7A
2SK1316-VB is a high voltage N-channel MOSFET for medium power applications.
**Product Model: 2SK1316-VB**
**Package Type: TO252**
**Configuration: Single N-channel**
**Technology: SJ_Multi-EPI**
**Main Features:**
- **VDS (drain-source voltage): ** 650V
- **VGS (gate-source voltage): ** ±30V
- **Vth (threshold voltage): ** 3.5V
- **RDS(ON) (on-resistance): ** 700mΩ@VGS=10V
- **ID (drain current): ** 7A
2SK1316-VB is a high voltage N-channel MOSFET for medium power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Parameter Description
1. **Basic parameters:**
- **Model:** 2SK1316-VB
- **Package type:** TO252
- **Configuration:** Single N-channel
- **Technology:** SJ_Multi-EPI
2. **Electrical characteristics:**
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
3. **On-resistance (RDS(ON)):**
- **@ VGS=10V:** 700mΩ
4. **Drain current (ID):** 7A
5. **Other characteristics:**
- **Maximum power dissipation:** 46W
- **Operating temperature range:** -55°C to 150°C
Domain and module applications：
### Applications and Modules
1. **Power Management:**
Due to the high drain-source voltage and moderate on-resistance of 2SK1316-VB, it is suitable for various medium-power power management applications, such as switching power supplies, inverters, etc.
2. **Industrial Control:**
In industrial control equipment, this MOSFET can be used for power switches and control circuits to provide efficient current control and management.
3. **Lighting Applications:**
In LED lighting systems, 2SK1316-VB can be used for switching power supplies and LED drivers to provide stable current output and efficient energy conversion.
4. **Electric Vehicle Charging Station:**
In the power control circuit of electric vehicle charging stations, this MOSFET can be used for switching power supplies and power conversion to ensure efficient energy conversion and stable current output.
In summary, 2SK1316-VB is a high-voltage N-channel MOSFET suitable for medium power applications, which can be widely used in power management, industrial control, lighting applications and electric vehicle charging piles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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