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2SK1304-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Model: 2SK1304-VB**
2SK1304-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO-3P package. This product has high drain voltage and extremely low on-resistance, suitable for applications requiring high power and high efficiency. It uses Trench technology and has good electrical characteristics and reliability.
**Model: 2SK1304-VB**
2SK1304-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO-3P package. This product has high drain voltage and extremely low on-resistance, suitable for applications requiring high power and high efficiency. It uses Trench technology and has good electrical characteristics and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 100V | 2.5V | 100A | 10mΩ | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### Detailed parameter description
- **Package: ** TO-3P
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 100V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 2.5V
- **On-resistance (RDS(ON)): ** 10mΩ @ VGS=4.5V, 9mΩ @ VGS=10V
- **Drain current (ID): ** 100A
- **Technology: ** Trench
- **Package: ** TO-3P
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 100V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 2.5V
- **On-resistance (RDS(ON)): ** 10mΩ @ VGS=4.5V, 9mΩ @ VGS=10V
- **Drain current (ID): ** 100A
- **Technology: ** Trench
Domain and module applications：
### Application fields and module examples
**1. Power electronic converter: **
2SK1304-VB is suitable for power electronic converters that require high power conversion. Its extremely low on-resistance and high drain current can provide high efficiency and stability.
**2. High-performance power module: **
In high-performance power modules, this MOSFET can be used for power switches and regulators. Its high drain voltage and low on-resistance help improve energy conversion efficiency and system stability.
**3. Industrial motor drive: **
2SK1304-VB can be applied to power switches and current regulators in industrial motor drives. Its high drain current and low on-resistance can improve the efficiency and response speed of the equipment.
**4. High-performance LED lighting system: **
In high-performance LED lighting systems, this model can be used for power switching and dimming control of LED drivers. Its low on-resistance and high drain voltage can improve the efficiency and stability of LED lighting systems.
The above application examples demonstrate the wide applicability of 2SK1304-VB MOSFET in fields requiring high power and high efficiency, reflecting its importance in modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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