2SK1295-VB Product details
Product introduction:
**Introduction: **
2SK1295-VB is an N-Channel MOSFET designed by VBsemi, suitable for various applications requiring medium voltage, low on-resistance and high current carrying capacity. Using Trench technology, it has stable performance and reliability, and is an ideal choice for applications with high performance and reliability requirements.
**Features:**
- **Drain-Source Voltage (VDS): ** 100V
- **Gate-Source Voltage (VGS): ** ±20V
- **Threshold Voltage (Vth): ** 1.8V
- **On-Resistance (RDS(ON)): ** 34mΩ @ VGS = 10V
- **Continuous Drain Current (ID): ** 50A
- **Technology: ** Trench
- **Package: ** TO220F
- **Configuration: ** Single N-Channel
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 100V | 1.8V | 50A | 34mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 100V | 1.8V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 100V | 1.8V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Detailed Specifications
1. **Electrical Characteristics:**
- **Maximum Drain-Source Voltage (VDS):** 100V
- **Maximum Gate-Source Voltage (VGS):** ±20V
- **Threshold Voltage (Vth):** 1.8V
- **On-Resistance (RDS(ON)):** 34mΩ @ VGS = 10V
- **Continuous Drain Current (ID):** 50A
2. **Thermal and Mechanical Characteristics:**
- **Package Type:** TO220F
- **Junction-to-Ambient Thermal Resistance:** Thermal resistance of standard TO220F package
- **Maximum Junction Temperature (Tj):** Specified by manufacturer
Domain and module applications:
3. **Performance characteristics:**
- **Technology:** Trench
- **Gate charge (Qg):** Typical value based on VGS and ID
- **Input capacitance (Ciss):** Typical value for high-frequency operation
### Application examples
1. **Power management:**
2SK1295-VB can be used for switches and regulators in power management systems to ensure stable power output and efficient energy conversion.
2. **Electric vehicle charging piles:**
Due to its high current carrying capacity and low on-resistance, 2SK1295-VB can be used for power management and drivers in electric vehicle charging piles to ensure a safe and efficient charging process.
3. **Industrial power systems:**
2SK1295-VB can be used for power management and drivers in industrial power systems. Its moderate current carrying capacity and low on-resistance make it an ideal choice for industrial environments, ensuring stable operation of equipment.
In summary, VBsemi's 2SK1295-VB MOSFET is a medium-voltage N-Channel MOSFET with stable performance and reliability, suitable for applications such as power management, electric vehicle charging piles and industrial power systems. Its stable performance and high reliability make it an ideal choice for harsh environments.
Technical support:
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