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2SK1284-Z-VB Product details
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### Product Introduction
**Model: 2SK1284-Z-VB**
2SK1284-Z-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO-252 package. This product has medium drain voltage and low on-resistance, suitable for applications requiring medium power and low power consumption. It uses Trench technology and has good electrical characteristics and reliability.
**Model: 2SK1284-Z-VB**
2SK1284-Z-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO-252 package. This product has medium drain voltage and low on-resistance, suitable for applications requiring medium power and low power consumption. It uses Trench technology and has good electrical characteristics and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Detailed parameter description
- **Package:** TO-252
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 100V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.8V
- **On-resistance (RDS(ON)):** 114mΩ @ VGS=10V
- **Drain current (ID):** 15A
- **Technology:** Trench
- **Package:** TO-252
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 100V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.8V
- **On-resistance (RDS(ON)):** 114mΩ @ VGS=10V
- **Drain current (ID):** 15A
- **Technology:** Trench
Domain and module applications：
### Application fields and module examples
**1. Power management module: **
2SK1284-Z-VB is suitable for medium-power power management modules, such as industrial control power supplies and server power supplies. Its low on-resistance and medium drain voltage characteristics can provide high efficiency and reliability.
**2. Electric vehicle controller: **
In the motor controller of electric vehicles, this MOSFET can be used for power switching and current regulators. Its medium drain voltage and low on-resistance help improve the efficiency and range of electric vehicles.
**3. Industrial control system: **
2SK1284-Z-VB can be applied to motor control modules in industrial control systems. Its high drain current and low on-resistance can improve the efficiency and response speed of equipment.
**4. LED lighting driver: **
In the field of LED lighting, this model can be used for power switching and dimming control of LED drivers. Its low on-resistance and medium drain voltage can improve the efficiency and stability of LED lighting systems.
The above application examples show the wide applicability of 2SK1284-Z-VB MOSFET in the field of medium power and low power consumption requirements, reflecting its importance in modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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