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2SK1282-Z-E2-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Product Model: 2SK1282-Z-E2-VB**
**Package Type: TO252**
**Configuration: Single N-channel**
**Technology: Trench**
**Main Features:**
- **VDS (drain-source voltage): ** 60V
- **VGS (gate-source voltage): ** ±20V
- **Vth (threshold voltage): ** 1.7V
- **RDS(ON) (on-resistance): ** 85mΩ@VGS=4.5V, 73mΩ@VGS=10V
- **ID (drain current): ** 18A
2SK1282-Z-E2-VB is a medium power N-channel MOSFET suitable for medium power applications.
**Product Model: 2SK1282-Z-E2-VB**
**Package Type: TO252**
**Configuration: Single N-channel**
**Technology: Trench**
**Main Features:**
- **VDS (drain-source voltage): ** 60V
- **VGS (gate-source voltage): ** ±20V
- **Vth (threshold voltage): ** 1.7V
- **RDS(ON) (on-resistance): ** 85mΩ@VGS=4.5V, 73mΩ@VGS=10V
- **ID (drain current): ** 18A
2SK1282-Z-E2-VB is a medium power N-channel MOSFET suitable for medium power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 60V | 1.7V | 18A | 85mΩ | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Parameter Description
1. **Basic parameters:**
- **Model:** 2SK1282-Z-E2-VB
- **Package type:** TO252
- **Configuration:** Single N-channel
- **Technology:** Trench
2. **Electrical characteristics:**
- **Drain-source voltage (VDS):** 60V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
3. **On-resistance (RDS(ON)):**
- **@ VGS=4.5V:** 85mΩ
- **@ VGS=10V:** 73mΩ
4. **Drain current (ID):** 18A
5. **Other features:**
- **Maximum power dissipation:** 38W
- **Operating temperature range:** -55°C to 150°C
Domain and module applications：
### Applications and Modules
1. **Power Management:**
Due to its medium drain-source voltage and low on-resistance, 2SK1282-Z-E2-VB is suitable for various medium power management applications, such as switching power supplies, inverters, etc.
2. **Power Tools:**
In the motor control circuit of medium power tools, it can provide efficient current switching and management, improving the performance and life of power tools.
3. **Household Appliances:**
In the power control of household appliances, this MOSFET can be used for switching power supplies and motor control, ensuring efficient energy conversion and stable current output.
4. **Industrial Automation:**
In industrial automation equipment, 2SK1282-Z-E2-VB can be used to control the power switch in the system, providing efficient current control and management, improving the efficiency and reliability of the system.
In summary, 2SK1282-Z-E2-VB is an N-channel MOSFET suitable for medium power applications, which can be widely used in power management, power tools, home appliances and industrial automation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
