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2SK1259-VB Product details

Product introduction:

### 1. 2SK1259-VB Product Introduction

2SK1259-VB is a single N-channel MOSFET in TO3P package. This model is manufactured using Trench technology, has a high drain-source voltage and extremely low on-resistance, and is suitable for high-power circuit design. Its maximum drain-source voltage (VDS) is 60V, the maximum gate-source voltage (VGS) is ±20V, the threshold voltage (Vth) is 2.5V, the on-resistance (RDS(ON)) is 5.4mΩ when VGS=10V, and the maximum drain current (ID) is 150A.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO3P Single-N-Channel 60V 2.5V 150A 5.4mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO3P Single-N-Channel Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO3P Single-N-Channel 60V 2.5V 150A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO3P Single-N-Channel 60V 2.5V 150A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO3P Single-N-Channel
### 2. 2SK1259-VB Detailed parameter description

- **Model**: 2SK1259-VB
- **Package**: TO3P
- **Type**: Single N-channel
- **Technology**: Trench
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 5.4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Turning-on delay time**: < 10ns
- **Turning-off delay time**: < 20ns
- **Total gate charge (Qg)**: 300nC
- **Gate-Drain Charge (Qgd)**: 75nC
- **Drain-Source Charge (Qgs)**: 225nC
- **Thermal Resistance (RθJC)**: 1.0°C/W
- **Operating Temperature Range**: -55°C to 175°C

Domain and module applications:


### 3. Application fields and module examples

#### Power management module
2SK1259-VB is widely used in high-power power management modules, especially in situations where high voltage and current need to be withstood, such as switching power supplies and voltage regulators.

#### Electric vehicle drive
Due to its high drain current and low on-resistance, this model is suitable for motor drives in electric and hybrid vehicles, ensuring high efficiency and dynamic performance of the system.

#### Industrial high-frequency power supply
In industrial high-frequency power supply systems, 2SK1259-VB can be used in high-frequency inverter and power amplifier circuits, providing high efficiency and reliability power supply solutions.

#### Robot control system
In the control systems of industrial robots and automation equipment, this model can be used in power switching circuits, providing high power density and precise control.

#### High Performance Audio Amplifier
In high-end sound systems and professional audio equipment, 2SK1259-VB can be used in audio power amplifier circuits to provide high-fidelity and low-distortion audio amplification.

In summary, 2SK1259-VB is a high-performance MOSFET component suitable for high-power circuit design, with broad application prospects and can be used in a variety of electronic devices and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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