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2SK1195-VB Product details
Back to previous pageProduct introduction：
### 1. 2SK1195-VB Product Introduction
2SK1195-VB is a single N-channel MOSFET in TO252 package. This model is manufactured using Trench technology, has a high drain-source voltage and moderate on-resistance, and is suitable for medium-power circuit design. Its maximum drain-source voltage (VDS) is 200V, the maximum gate-source voltage (VGS) is ±20V, the threshold voltage (Vth) is 3V, the on-resistance (RDS(ON)) is 245mΩ when VGS=10V, and the maximum drain current (ID) is 10A.
2SK1195-VB is a single N-channel MOSFET in TO252 package. This model is manufactured using Trench technology, has a high drain-source voltage and moderate on-resistance, and is suitable for medium-power circuit design. Its maximum drain-source voltage (VDS) is 200V, the maximum gate-source voltage (VGS) is ±20V, the threshold voltage (Vth) is 3V, the on-resistance (RDS(ON)) is 245mΩ when VGS=10V, and the maximum drain current (ID) is 10A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### 2. 2SK1195-VB Detailed parameter description
- **Model**: 2SK1195-VB
- **Package**: TO252
- **Type**: Single N-channel
- **Technology**: Trench
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 245mΩ @ VGS=10V
- **Maximum drain current (ID)**: 10A
- **Turning-on delay time**: < 10ns
- **Turning-off delay time**: < 20ns
- **Total gate charge (Qg)**: 30nC
- **Gate-drain charge (Qgd)**: 8nC
- **Drain-source charge (Qgs)**: 22nC
- **Thermal resistance (RθJC)**: < 2.0°C/W
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
### 3. Application fields and module examples
#### Power management module
2SK1195-VB is widely used in medium-power power management modules, especially in situations where higher voltage and current tolerance are required, such as switching power supplies and voltage regulators.
#### Automotive electronic systems
Due to its higher drain current and lower on-resistance, this model is suitable for power switching circuits in automotive electronic systems, such as engine control units (ECUs), lighting controls, etc.
#### Industrial control systems
In industrial control systems, 2SK1195-VB can be used in various medium-power motor drives and control systems, such as motor controllers, industrial automation equipment, etc.
#### Solar inverter
In solar power generation systems, this model can be used in inverter circuits to help achieve efficient conversion and management of solar power.
#### LED Lighting System
In LED lighting systems, 2SK1195-VB can be used in LED driver circuits to provide high-efficiency and reliable LED lighting solutions.
In summary, 2SK1195-VB has broad application prospects in medium-power circuit design and is a high-performance MOSFET component suitable for a variety of electronic devices and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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