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2SK1170-VB Product details
Back to previous pageProduct introduction：
### 1. 2SK1170-VB Product Introduction
VBsemi's 2SK1170-VB is a high-voltage single N-channel MOSFET manufactured using SJ_Multi-EPI technology. The device is packaged in a TO-3P package and has high drain-source voltage and current handling capabilities, making it suitable for power management and switching applications that need to withstand high voltages and currents. Its features include a 600V drain-source voltage (VDS) and a ±30V gate-source voltage (VGS), ensuring stable operation in a variety of circuits.
VBsemi's 2SK1170-VB is a high-voltage single N-channel MOSFET manufactured using SJ_Multi-EPI technology. The device is packaged in a TO-3P package and has high drain-source voltage and current handling capabilities, making it suitable for power management and switching applications that need to withstand high voltages and currents. Its features include a 600V drain-source voltage (VDS) and a ±30V gate-source voltage (VGS), ensuring stable operation in a variety of circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### 2. Detailed parameter description of 2SK1170-VB
- **Model**: 2SK1170-VB
- **Package type**: TO-3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: 2SK1170-VB
- **Package type**: TO-3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
### III. Application fields and module examples
1. **Power inverter**: Due to its high drain-source voltage and current handling capability, the 2SK1170-VB is suitable for switching elements in power inverters. These inverters can be used to convert DC to AC for power conversion in solar inverters, UPS systems, etc.
2. **Industrial motor drive**: In industrial motor drives, high-voltage and high-current switching devices are required to control the speed and operation of the motor. The characteristics of the 2SK1170-VB make it an ideal choice for such applications.
3. **Electric vehicle charging piles**: In electric vehicle charging piles, high-voltage and high-current switching devices are required to control the charging current and ensure safety. The characteristics of the 2SK1170-VB make it an ideal choice for such applications.
In summary, the 2SK1170-VB is suitable for power management and switching applications that require high voltage and current handling capability. Its properties give it broad application prospects in fields such as industry, electric vehicles and renewable energy.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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