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2SK1169-VB Product details
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### Product Introduction
**Model: 2SK1169-VB**
2SK1169-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO-3P package. This product has high drain voltage and low on-resistance, suitable for applications requiring high voltage and low power consumption. It adopts SJ_Multi-EPI technology and has good electrical characteristics and reliability.
**Model: 2SK1169-VB**
2SK1169-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO-3P package. This product has high drain voltage and low on-resistance, suitable for applications requiring high voltage and low power consumption. It adopts SJ_Multi-EPI technology and has good electrical characteristics and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### Detailed parameter description
- **Package: ** TO-3P
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 600V
- **Gate-source voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 190mΩ @ VGS=10V
- **Drain current (ID): ** 20A
- **Technology: ** SJ_Multi-EPI
Domain and module applications：
### Applications and Module Examples
**1. Power Electronic Converter: **
2SK1169-VB is suitable for converters and inverters in the field of power electronics. Its high drain voltage and low on-resistance can provide stable power conversion and efficient energy conversion.
**2. HVDC Transmission System: **
In HVDC transmission system, this MOSFET can be used for power switch and regulator. Its high drain voltage and low on-resistance help improve energy conversion efficiency and system stability.
**3. Electric Vehicle Charging Pile: **
2SK1169-VB is suitable for power switch and current regulator of electric vehicle charging pile. Its high drain voltage and low on-resistance can improve charging efficiency and reliability.
**4. Solar Inverter: **
This model can be used for power switch and regulator of solar inverter. Its high drain voltage and low on-resistance help improve energy conversion efficiency and system stability.
The above application examples demonstrate the wide applicability of 2SK1169-VB MOSFET in the fields of high voltage and low power consumption requirements, reflecting its importance in modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
