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2SK1168-VB Product details
Back to previous pageProduct introduction：
### 1. Product Introduction
**Model: 2SK1168-VB**
2SK1168-VB is a high-performance single N-channel MOSFET produced by VBsemi, using TO3P package. The device has high withstand voltage, moderate on-resistance and high current handling capability, suitable for the design of high-power electronic equipment and modules.
**Model: 2SK1168-VB**
2SK1168-VB is a high-performance single N-channel MOSFET produced by VBsemi, using TO3P package. The device has high withstand voltage, moderate on-resistance and high current handling capability, suitable for the design of high-power electronic equipment and modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 15A | 280mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### 2. Detailed parameter description
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 280mΩ @ VGS=10V
- **Drain current (ID)**: 15A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
### 3. Application fields and module examples
2SK1168-VB has high withstand voltage, moderate on-resistance and high current handling capability, and is suitable for the design of a variety of high-power electronic devices and modules.
1. **Power supply**:
- **Power switch**: In high-power power switches, 2SK1168-VB can be used for efficient power switches to provide stable voltage output.
- **Inverter**: In high-power inverters, the device can be used to convert DC power to AC power for various high-power applications.
2. **Industrial motor drive**:
- In industrial motor drive systems, 2SK1168-VB can be used to drive high-power motors, providing efficient energy conversion and low losses.
3. **Power transmission**:
- **Power inverter**: In power inverters, the device can be used to convert DC power to AC power for power transmission and control.
4. **Electric Vehicle Charger**:
- In electric vehicle chargers, 2SK1168-VB can be used to control the battery charging and discharging process to ensure charging efficiency and battery life.
5. **Medical Equipment**:
- In high-power medical equipment, 2SK1168-VB can be used to drive high-power devices and process signals to achieve efficient and reliable medical equipment functions.
2SK1168-VB is a high-performance, high-power MOSFET suitable for the design of a variety of high-power electronic devices and systems, providing efficient and reliable solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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