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2SK1166-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Product Model: 2SK1166-VB**
**Package Type: TO3P**
**Configuration: Single N-Channel**
**Technology: SJ_Multi-EPI**
**Main Features:**
- **VDS (drain-source voltage): ** 600V
- **VGS (gate-source voltage): ** ±30V
- **Vth (threshold voltage): ** 3.5V
- **RDS(ON) (on-resistance): ** 380mΩ@VGS=10V
- **ID (drain current): ** 11A
2SK1166-VB is a high voltage N-channel MOSFET for medium power applications.
**Product Model: 2SK1166-VB**
**Package Type: TO3P**
**Configuration: Single N-Channel**
**Technology: SJ_Multi-EPI**
**Main Features:**
- **VDS (drain-source voltage): ** 600V
- **VGS (gate-source voltage): ** ±30V
- **Vth (threshold voltage): ** 3.5V
- **RDS(ON) (on-resistance): ** 380mΩ@VGS=10V
- **ID (drain current): ** 11A
2SK1166-VB is a high voltage N-channel MOSFET for medium power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### Parameter Description
1. **Basic parameters:**
- **Model:** 2SK1166-VB
- **Package type:** TO3P
- **Configuration:** Single N-channel
- **Technology:** SJ_Multi-EPI
2. **Electrical characteristics:**
- **Drain-source voltage (VDS):** 600V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
3. **On-resistance (RDS(ON)):**
- **@ VGS=10V:** 380mΩ
4. **Drain current (ID):** 11A
5. **Other characteristics:**
- **Maximum power dissipation:** 160W
- **Operating temperature range:** -55°C to 150°C
Domain and module applications：
### Application fields and modules
1. **Power switch: **
Due to the high drain-source voltage and moderate on-resistance of 2SK1166-VB, it is suitable for various medium-power power switches and converters to provide stable power output.
2. **Power tools: **
In the motor control circuit of medium-power power tools, it can provide efficient current switching and management, improving the performance and life of power tools.
3. **Household appliances: **
In the power control of household appliances, this MOSFET can be used for switching power supplies and motor control to ensure efficient energy conversion and stable current output.
4. **Industrial automation: **
In industrial automation equipment, 2SK1166-VB can be used for power switches in the control system, providing efficient current control and management, and improving the efficiency and reliability of the system.
In summary, 2SK1166-VB is a high-voltage N-channel MOSFET suitable for medium-power applications, which can be widely used in power switches, power tools, home appliances and industrial automation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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