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2SK1165-VB Product details
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### Product Introduction
**Model**: 2SK1165-VB
**Package**: TO3P
**Configuration**: Single N-channel MOSFET
**Technology**: SJ_Multi-EPI
2SK1165-VB is a high voltage, high power single N-channel MOSFET in TO3P package. It adopts SJ_Multi-EPI technology, which has the characteristics of high voltage withstand capability and low on-resistance. It is suitable for applications that need to work under high voltage and high current conditions.
**Model**: 2SK1165-VB
**Package**: TO3P
**Configuration**: Single N-channel MOSFET
**Technology**: SJ_Multi-EPI
2SK1165-VB is a high voltage, high power single N-channel MOSFET in TO3P package. It adopts SJ_Multi-EPI technology, which has the characteristics of high voltage withstand capability and low on-resistance. It is suitable for applications that need to work under high voltage and high current conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### Detailed parameter description
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 380mΩ @ VGS = 10V
- **Drain current (ID)**: 11A
- **Package type**: TO3P
- **Operating temperature range**: -55°C to 150°C
- **Power consumption (Ptot)**: 200W
Domain and module applications：
### Applications and Module Examples
2SK1165-VB MOSFET is suitable for high voltage and high power applications. Here are some specific application areas and module examples:
1. **Power Management**:
- As the main switch device in the switch mode power supply (SMPS) for high-efficiency power conversion.
- Used in high voltage DC-DC converters to improve conversion efficiency and reduce energy loss.
2. **Power Control**:
- Used for power switch control in industrial power control systems to ensure the safe operation of equipment.
- Suitable for high voltage power transmission systems and power distribution equipment.
3. **Lighting Application**:
- As a switch device in high voltage LED drivers to drive high brightness LED lighting systems.
- Suitable for indoor and outdoor lighting systems, providing stable and reliable lighting solutions.
4. **Electric Vehicles**:
- Used for power management and drive control in the power control systems of electric and hybrid vehicles.
- Suitable for motor drives and battery management systems in electric vehicles.
5. **Industrial High Voltage Equipment**:
- Used as power switching devices in industrial high voltage equipment to provide high-efficiency control of equipment.
- Suitable for high voltage power tools and high voltage control equipment.
The high voltage withstand capability and high power characteristics of 2SK1165-VB make it an ideal choice for a variety of high voltage, high power applications, providing stable and reliable performance in complex working environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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