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2SK1162-VB Product details
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### 2SK1162-VB Product Introduction
2SK1162-VB is a single N-channel MOSFET in TO3P package. It has a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V (±V), a threshold voltage (Vth) of 3.5V, and adopts SJ_Multi-EPI technology, which is suitable for high-voltage and high-power applications.
2SK1162-VB is a single N-channel MOSFET in TO3P package. It has a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V (±V), a threshold voltage (Vth) of 3.5V, and adopts SJ_Multi-EPI technology, which is suitable for high-voltage and high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### 2SK1162-VB Detailed parameter description
- **Model: 2SK1162-VB**
- **Package: TO3P**
- **Polarity: Single N-channel**
- **Drain-source voltage (VDS): 600V**
- **Gate-source voltage (VGS): ±30V**
- **Threshold voltage (Vth): 3.5V**
- **On-resistance (RDS(ON)): 380mΩ @ VGS=10V**
- **Drain current (ID): 11A**
- **Technology: SJ_Multi-EPI**
- **Model: 2SK1162-VB**
- **Package: TO3P**
- **Polarity: Single N-channel**
- **Drain-source voltage (VDS): 600V**
- **Gate-source voltage (VGS): ±30V**
- **Threshold voltage (Vth): 3.5V**
- **On-resistance (RDS(ON)): 380mΩ @ VGS=10V**
- **Drain current (ID): 11A**
- **Technology: SJ_Multi-EPI**
Domain and module applications：
### Applicable fields and modules
1. **Power converter**
- **Application examples**: 2SK1162-VB can be used in high-voltage power converters, such as switching power supplies and inverters. Its high drain voltage and low on-resistance help improve the efficiency and reliability of power converters.
2. **Industrial control systems**
- **Application examples**: In industrial control systems that need to withstand high voltages, 2SK1162-VB can be used as a switching element to ensure stable operation and high efficiency of the system.
3. **Medical equipment**
- **Application examples**: Due to the high voltage and high power characteristics of 2SK1162-VB, it can be used in various switching circuits in medical equipment to ensure the safe operation of the equipment in various environments.
4. **Solar Inverter**
- **Application Examples**: In solar inverters, 2SK1162-VB can be used in the power conversion part, and its efficient switching characteristics help improve the efficiency and reliability of the entire system.
Through these application examples, we can see the wide application of 2SK1162-VB in high-voltage, high-power electronic devices and circuits, demonstrating its importance and practicality in the field of high-voltage power management and conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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