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2SK1161-VB Product details
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### 2SK1161-VB MOSFET Product Overview
**Introduction: **
2SK1161-VB is an N-Channel MOSFET designed by VBsemi, suitable for various applications requiring high voltage, low on-resistance and moderate current carrying capacity. Using SJ_Multi-EPI technology, it has stable performance and reliability, and is an ideal choice for applications with high performance and reliability requirements.
**Features:**
- **Drain-Source Voltage (VDS):** 600V
- **Gate-Source Voltage (VGS):** ±30V
- **Threshold Voltage (Vth):** 3.5V
- **On-Resistance (RDS(ON)):** 380mΩ @ VGS = 10V
- **Continuous Drain Current (ID):** 11A
- **Technology:** SJ_Multi-EPI
- **Package:** TO3P
- **Configuration:** Single N-Channel
**Introduction: **
2SK1161-VB is an N-Channel MOSFET designed by VBsemi, suitable for various applications requiring high voltage, low on-resistance and moderate current carrying capacity. Using SJ_Multi-EPI technology, it has stable performance and reliability, and is an ideal choice for applications with high performance and reliability requirements.
**Features:**
- **Drain-Source Voltage (VDS):** 600V
- **Gate-Source Voltage (VGS):** ±30V
- **Threshold Voltage (Vth):** 3.5V
- **On-Resistance (RDS(ON)):** 380mΩ @ VGS = 10V
- **Continuous Drain Current (ID):** 11A
- **Technology:** SJ_Multi-EPI
- **Package:** TO3P
- **Configuration:** Single N-Channel
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### Detailed Specifications
1. **Electrical Characteristics:**
- **Maximum Drain-Source Voltage (VDS):** 600V
- **Maximum Gate-Source Voltage (VGS):** ±30V
- **Threshold Voltage (Vth):** 3.5V
- **On-Resistance (RDS(ON)):** 380mΩ @ VGS = 10V
- **Continuous Drain Current (ID):** 11A
2. **Thermal and Mechanical Characteristics:**
- **Package Type:** TO3P
- **Junction-to-Ambient Thermal Resistance:** Thermal resistance of standard TO3P package
- **Maximum Junction Temperature (Tj):** Specified by manufacturer
3. **Performance Characteristics:**
- **Technology:** SJ_Multi-EPI
- **Gate Charge (Qg):** Typical values based on VGS and ID: - **Input capacitance (Ciss): ** Typical values for high frequency operation:
Domain and module applications：
### Application Examples
1. **Power Inverter:**
2SK1161-VB can be used in power inverters to convert DC to AC. Its high drain-source voltage and stable performance ensure reliable operation in home and industrial applications.
2. **Industrial Power System:**
2SK1161-VB can be used for power management and drivers in industrial power systems. Its moderate current carrying capacity and low on-resistance make it an ideal choice for industrial environments, ensuring stable operation of equipment.
3. **Electric Vehicle Charging Pile:**
Due to its high voltage carrying capacity and stable performance, 2SK1161-VB can be used for power management and drivers in electric vehicle charging piles, ensuring a safe and efficient charging process.
In summary, VBsemi's 2SK1161-VB MOSFET is a high-voltage N-Channel MOSFET with stable performance and reliability, suitable for applications such as power inverters, industrial power systems and electric vehicle charging piles. Its stable performance and high reliability make it an ideal choice for harsh environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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