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2SK1151STL-E-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Model: 2SK1151STL-E-VB**
2SK1151STL-E-VB is a high performance single N-channel MOSFET manufactured using planar technology with high drain-source voltage and moderate on-resistance. It is designed to meet the stringent requirements of modern electronic devices for high voltage applications and low power consumption.
**Model: 2SK1151STL-E-VB**
2SK1151STL-E-VB is a high performance single N-channel MOSFET manufactured using planar technology with high drain-source voltage and moderate on-resistance. It is designed to meet the stringent requirements of modern electronic devices for high voltage applications and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 2A | 3440mΩ | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 3440mΩ @ VGS = 4.5V
- 4300mΩ @ VGS = 10V
- **Drain current (ID)**: 2A
- **Technology type**: Plannar
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 3440mΩ @ VGS = 4.5V
- 4300mΩ @ VGS = 10V
- **Drain current (ID)**: 2A
- **Technology type**: Plannar
Domain and module applications：
### Applications and Module Examples
**Power Inverter**: 2SK1151STL-E-VB can be used as a power switch element in high-voltage inverters, providing efficient energy conversion and stable inverter control.
**Solar Cell Inverter**: In solar cell inverters, the device can be used as a high-voltage switch, providing efficient energy conversion and stable inverter control.
**Industrial Power**: High-voltage switch for industrial power systems, such as in industrial equipment and robot control systems.
**Electric Vehicle Charging Station**: In electric vehicle charging stations, the device can be used as a power switch, providing stable charging current and efficient energy conversion.
**Medical Equipment**: In medical equipment, such as X-ray machines and medical ultrasound machines, 2SK1151STL-E-VB can be used as a power switch element, providing stable power control and efficient energy conversion.
The above examples demonstrate the versatility of 2SK1151STL-E-VB and its superior performance in a variety of high-voltage, low-power circuits, making it an ideal choice for a variety of high-performance electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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