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2SK1151L-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Product Model: 2SK1151L-VB**
**Package Type: TO251**
**Configuration: Single N-channel**
**Technology: Plannar**
**Main Features:**
- **VDS (drain-source voltage): ** 650V
- **VGS (gate-source voltage): ** ±30V
- **Vth (threshold voltage): ** 3.5V
- **RDS(ON) (on-resistance): ** 4300mΩ@VGS=10V
- **ID (drain current): ** 2A
2SK1151L-VB is a high voltage N-channel MOSFET manufactured using Plannar technology for low power and high voltage applications.
**Product Model: 2SK1151L-VB**
**Package Type: TO251**
**Configuration: Single N-channel**
**Technology: Plannar**
**Main Features:**
- **VDS (drain-source voltage): ** 650V
- **VGS (gate-source voltage): ** ±30V
- **Vth (threshold voltage): ** 3.5V
- **RDS(ON) (on-resistance): ** 4300mΩ@VGS=10V
- **ID (drain current): ** 2A
2SK1151L-VB is a high voltage N-channel MOSFET manufactured using Plannar technology for low power and high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel |
### Parameter Description
1. **Basic parameters:**
- **Model:** 2SK1151L-VB
- **Package type:** TO251
- **Configuration:** Single N-channel
- **Technology:** Plannar
2. **Electrical characteristics:**
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
3. **On-resistance (RDS(ON)):**
- **@ VGS=10V:** 4300mΩ
4. **Drain current (ID):** 2A
5. **Other characteristics:**
- **Maximum power dissipation:** 25W
- **Operating temperature range:** -55°C to 150°C
Domain and module applications：
### Application Fields and Modules
1. **Power Management:**
Due to the high drain-source voltage and moderate on-resistance of 2SK1151L-VB, it is suitable for various low-power and high-voltage power management applications, such as switching power supplies, inverters, etc.
2. **Lighting Control:**
In LED lighting systems, this MOSFET can be used for switching power supplies and lighting controllers to ensure efficient energy conversion and stable current output.
3. **Power Tools:**
In the motor control circuit of low-power power tools, it can provide efficient current switching and management, improving the performance and life of power tools.
4. **Industrial Automation:**
In industrial automation equipment, 2SK1151L-VB can be used to control the power switch in the control system, providing efficient current control and management, and improving the efficiency and reliability of the system.
In summary, 2SK1151L-VB is an N-channel MOSFET suitable for low power and high voltage applications, which can be widely used in power management, lighting control, power tools and industrial automation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
