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2SK1133-T2B-A-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Model**: 2SK1133-T2B-A-VB
**Package**: SOT23-3
**Configuration**: Single N-channel MOSFET
**Technology**: Trench type
2SK1133-T2B-A-VB is a low-power single N-channel MOSFET that uses trench technology and is packaged in SOT23-3. This product has low power characteristics and is suitable for applications that need to operate under low voltage and low current conditions.
**Model**: 2SK1133-T2B-A-VB
**Package**: SOT23-3
**Configuration**: Single N-channel MOSFET
**Technology**: Trench type
2SK1133-T2B-A-VB is a low-power single N-channel MOSFET that uses trench technology and is packaged in SOT23-3. This product has low power characteristics and is suitable for applications that need to operate under low voltage and low current conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | 3100mΩ | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
### Detailed parameter description
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Drain current (ID)**: 0.3A
- **Package type**: SOT23-3
- **Operating temperature range**: -55°C to 150°C
- **Power consumption (Ptot)**: 0.5W
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Drain current (ID)**: 0.3A
- **Package type**: SOT23-3
- **Operating temperature range**: -55°C to 150°C
- **Power consumption (Ptot)**: 0.5W
Domain and module applications：
### Applications and Module Examples
2SK1133-T2B-A-VB MOSFET is suitable for low power, low voltage and low current applications. Here are some specific application areas and module examples:
1. **Sensor Interface**:
- Used in sensor signal conditioning circuits to provide amplification and processing of sensor signals.
- Suitable for sensor interfaces such as temperature sensors and light sensors.
2. **Battery Management**:
- Used in battery management circuits in portable electronic devices to control battery charge and discharge.
- Suitable for portable devices such as smartphones and tablets.
3. **Low Power Drive**:
- Used in low power drive circuits, such as low power motor control and LED drive.
- Suitable for drive circuits of small home appliances and embedded systems.
4. **Signal switch**:
- Used in signal switch circuits to switch and select signals.
- Suitable for signal switch applications such as communication equipment and audio equipment.
5. **Electronic switch**:
- Used in electronic switch circuits to switch and control electronic equipment.
- Suitable for electronic switch applications such as smart home devices and electronic toys.
The low power characteristics of 2SK1133-T2B-A-VB make it an ideal choice for various low-power applications, providing stable and reliable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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