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2SK1087-MR-VB Product details
Back to previous pageProduct introduction：
### 1. 2SK1087-MR-VB Product Introduction
2SK1087-MR-VB is a single N-channel MOSFET packaged in TO220F. This model is manufactured using Trench technology, has low on-resistance and excellent switching characteristics, and is suitable for medium-power circuit design. Its maximum drain-source voltage (VDS) is 100V, the maximum gate-source voltage (VGS) is ±20V, the threshold voltage (Vth) is 1.8V, the on-resistance (RDS(ON)) is 86mΩ at VGS=10V, and the maximum drain current (ID) is 18A.
2SK1087-MR-VB is a single N-channel MOSFET packaged in TO220F. This model is manufactured using Trench technology, has low on-resistance and excellent switching characteristics, and is suitable for medium-power circuit design. Its maximum drain-source voltage (VDS) is 100V, the maximum gate-source voltage (VGS) is ±20V, the threshold voltage (Vth) is 1.8V, the on-resistance (RDS(ON)) is 86mΩ at VGS=10V, and the maximum drain current (ID) is 18A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 100V | 1.8V | 18A | 86mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 100V | 1.8V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 100V | 1.8V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### 2. 2SK1087-MR-VB Detailed parameter description
- **Model**: 2SK1087-MR-VB
- **Package**: TO220F
- **Type**: Single N-channel
- **Technology**: Trench
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 86mΩ @ VGS=10V
- **Maximum drain current (ID)**: 18A
- **Turning on delay time**: < 10ns
- **Turning off delay time**: < 20ns
- **Total gate charge (Qg)**: 42nC
- **Gate-drain charge (Qgd)**: 10nC
- **Drain-source charge (Qgs)**: 32nC
- **Thermal resistance (RθJC)**: < 1.5°C/W
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
### 3. Application fields and module examples
#### Power management module
2SK1087-MR-VB is widely used in medium-power power management modules, especially in applications requiring high efficiency and low losses, such as switching power supplies and voltage regulators.
#### Electric vehicle battery management
Due to its higher drain current and lower on-resistance, this model is suitable for power switch circuits in electric vehicle battery management systems to ensure high efficiency and safety of the system.
#### Industrial motor control
In the field of industrial motor control, 2SK1087-MR-VB can be used in various medium-power motor drive and control systems, such as wind turbines, pump station control, etc.
#### Power inverter
In renewable energy systems such as solar and wind energy, this model can be used in inverter circuits to help achieve efficient energy conversion and management.
#### High Performance Power Amplifier
In audio systems and professional audio equipment, 2SK1087-MR-VB can be used in power amplifier circuits to provide high-fidelity audio amplification.
In summary, 2SK1087-MR-VB has a wide range of application prospects in medium-power circuit design and is a high-performance MOSFET component suitable for a variety of electronic devices and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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