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2SK1006-VB Product details
Back to previous pageProduct introduction：
### 1. 2SK1006-VB Product Introduction
VBsemi's 2SK1006-VB is a high-voltage single N-channel MOSFET manufactured using planar technology. The device is packaged in a TO-220F package and has high drain-source voltage and current handling capabilities, making it suitable for power management and switching applications that need to withstand high voltages and currents. Its features include a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, ensuring stable operation in a variety of circuits.
VBsemi's 2SK1006-VB is a high-voltage single N-channel MOSFET manufactured using planar technology. The device is packaged in a TO-220F package and has high drain-source voltage and current handling capabilities, making it suitable for power management and switching applications that need to withstand high voltages and currents. Its features include a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, ensuring stable operation in a variety of circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### 2. Detailed parameter description of 2SK1006-VB
- **Model**: 2SK1006-VB
- **Package type**: TO-220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology**: Plannar
- **Model**: 2SK1006-VB
- **Package type**: TO-220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology**: Plannar
Domain and module applications：
### 3. Application fields and module examples
1. **Power inverter**: Due to its high drain-source voltage and current handling capability, the 2SK1006-VB is suitable for switching elements in power inverters. These inverters can be used to convert DC to AC for power conversion in solar panels, wind turbines, etc.
2. **Electric vehicle charging piles**: In electric vehicle charging piles, high-voltage and high-current switching devices are required to control the charging current and ensure safety. The characteristics of the 2SK1006-VB make it an ideal choice for such applications.
3. **Industrial power system**: This MOSFET is suitable for various industrial power systems such as UPS (uninterruptible power supply system), industrial motor drives, etc. Its high performance and reliability make it an ideal choice for industrial environments.
In summary, the 2SK1006-VB is suitable for power management and switching applications that require high voltage and current handling capability. Its characteristics make it have a wide range of application prospects in the fields of industry, automobiles, and renewable energy.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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