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2SK1006-01MR-VB Product details
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### Product Introduction
**Model: 2SK1006-01MR-VB**
2SK1006-01MR-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO-220F package. This product has high drain voltage and low on-resistance, suitable for applications requiring high voltage and low power consumption. It uses Plannar technology and has good electrical characteristics and reliability.
**Model: 2SK1006-01MR-VB**
2SK1006-01MR-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO-220F package. This product has high drain voltage and low on-resistance, suitable for applications requiring high voltage and low power consumption. It uses Plannar technology and has good electrical characteristics and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Detailed parameter description
- **Package:** TO-220F
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 1100mΩ @ VGS=10V
- **Drain current (ID):** 7A
- **Technology:** Plannar
- **Package:** TO-220F
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 1100mΩ @ VGS=10V
- **Drain current (ID):** 7A
- **Technology:** Plannar
Domain and module applications：
### Applications and Module Examples
**1. Power Inverter: **
2SK1006-01MR-VB is suitable for power inverters in the field of power electronics. Its high drain voltage and low on-resistance can provide stable power conversion and high-efficiency energy conversion.
**2. Industrial Control Systems: **
In industrial control systems, this MOSFET can be used in motor controllers and power regulators. Its high drain voltage and low on-resistance help improve the performance and reliability of equipment.
**3. Electric Vehicle Charging Pile: **
2SK1006-01MR-VB is suitable for power switches and current regulators in electric vehicle charging piles. Its high drain voltage and low on-resistance can improve charging efficiency and reliability.
**4. Solar Inverter: **
This model can be used for power switches and regulators in solar inverters. Its high drain voltage and low on-resistance help improve energy conversion efficiency and system stability.
The above application examples demonstrate the wide applicability of 2SK1006-01MR-VB MOSFET in the fields of high voltage and low power consumption requirements, reflecting its importance in modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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