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2SJ683-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Product Model: 2SJ683-VB**
**Package Type: TO263**
**Configuration: Single P-channel**
**Technology: Trench**
**Main Features:**
- **VDS (drain-source voltage):** -60V
- **VGS (gate-source voltage):** ±20V
- **Vth (threshold voltage):** -3V
- **RDS(ON) (on-resistance):** 8.5mΩ@VGS=4.5V; 6.5mΩ@VGS=10V
- **ID (drain current):** -110A
2SJ683-VB is a high-performance P-channel MOSFET suitable for high-power, high-efficiency switching power supplies and motor control applications.
**Product Model: 2SJ683-VB**
**Package Type: TO263**
**Configuration: Single P-channel**
**Technology: Trench**
**Main Features:**
- **VDS (drain-source voltage):** -60V
- **VGS (gate-source voltage):** ±20V
- **Vth (threshold voltage):** -3V
- **RDS(ON) (on-resistance):** 8.5mΩ@VGS=4.5V; 6.5mΩ@VGS=10V
- **ID (drain current):** -110A
2SJ683-VB is a high-performance P-channel MOSFET suitable for high-power, high-efficiency switching power supplies and motor control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -60V | -3V | -110A | 8.5mΩ | 6.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -60V | -3V | -110A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -60V | -3V | -110A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel |
### Parameter Description
1. **Basic parameters:**
- **Model:** 2SJ683-VB
- **Package type:** TO263
- **Configuration:** Single P-channel
- **Technology:** Trench
2. **Electrical characteristics:**
- **Drain-source voltage (VDS):** -60V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -3V
3. **On-resistance (RDS(ON)):**
- **@ VGS=4.5V:** 8.5mΩ
- **@ VGS=10V:** 6.5mΩ
4. **Drain current (ID):** -110A
5. **Other Features:**
- **Maximum Power Dissipation:** 300W
- **Operating Temperature Range:** -55°C to 150°C
Domain and module applications：
### Applications and Modules
1. **High-power switching power supply: **
Due to its low on-resistance and high drain current carrying capacity, 2SJ683-VB is suitable for switching power supply designs that require high power density and high efficiency.
2. **Electric vehicle drive: **
In the motor control system of electric vehicles, this MOSFET can be used for power switches to provide efficient current control and management, thereby improving the performance and energy efficiency of electric vehicles.
3. **Industrial motor control: **
Power switches used in industrial motor control systems can withstand high voltages and currents to ensure high efficiency and reliability of the system.
4. **UPS power supply: **
In UPS (uninterruptible power supply) systems, 2SJ683-VB can be used for power switches to ensure that the UPS system can provide stable power output during power outages.
In summary, 2SJ683-VB is a high-performance P-channel MOSFET suitable for a variety of high-power, high-efficiency power supplies and motor control applications, and is an ideal choice for many industrial and automotive electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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