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2SJ666-VB Product details
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### 2SJ666-VB MOSFET Product Overview
**Introduction: **
2SJ666-VB is a P-Channel MOSFET designed by VBsemi, suitable for various applications requiring high-efficiency power management. Using Trench technology, it has low on-resistance and high current carrying capacity, making it an ideal choice for applications with high performance requirements.
**Features:**
- **Drain-Source Voltage (VDS):** -100V
- **Gate-Source Voltage (VGS):** ±20V
- **Threshold Voltage (Vth):** -2V
- **On-Resistance (RDS(ON)):** 50mΩ @ VGS = 4.5V, 40mΩ @ VGS = 10V
- **Continuous Drain Current (ID):** -37A
- **Technology:** Channel
- **Package:** TO263
- **Configuration:** Single P-Channel
**Introduction: **
2SJ666-VB is a P-Channel MOSFET designed by VBsemi, suitable for various applications requiring high-efficiency power management. Using Trench technology, it has low on-resistance and high current carrying capacity, making it an ideal choice for applications with high performance requirements.
**Features:**
- **Drain-Source Voltage (VDS):** -100V
- **Gate-Source Voltage (VGS):** ±20V
- **Threshold Voltage (Vth):** -2V
- **On-Resistance (RDS(ON)):** 50mΩ @ VGS = 4.5V, 40mΩ @ VGS = 10V
- **Continuous Drain Current (ID):** -37A
- **Technology:** Channel
- **Package:** TO263
- **Configuration:** Single P-Channel
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -100V | -2V | -37A | 50mΩ | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -100V | -2V | -37A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -100V | -2V | -37A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel |
### Detailed Specifications
1. **Electrical Characteristics:**
- **Maximum Drain-Source Voltage (VDS):** -100V
- **Maximum Gate-Source Voltage (VGS):** ±20V
- **Threshold Voltage (Vth):** -2V
- **On-Resistance (RDS(ON)):**
- 50mΩ @ VGS = 4.5V
- 40mΩ @ VGS = 10V
- **Continuous Drain Current (ID):** -37A
2. **Thermal and Mechanical Characteristics:**
- **Package Type:** TO263
- **Junction-to-Ambient Thermal Resistance:** Thermal resistance of standard TO263 package
- **Maximum Junction Temperature (Tj):** Specified by manufacturer
3. **Performance Characteristics:**
- **Technology:** Channel
- **Gate Charge (Qg): **Typical value based on VGS and ID
- **Input Capacitance (Ciss): **Typical value for high frequency operation
Domain and module applications：
### Application Examples
1. **Power Management:**
2SJ666-VB is ideal for power management systems in consumer electronics. Its high current carrying capacity and low on-resistance make it suitable for DC-DC converters, providing efficient power regulation and minimizing energy loss.
2. **Electric Vehicle Charging Pile:**
Due to its high voltage carrying capacity and stable performance, 2SJ666-VB can be used for power management and drivers in electric vehicle charging piles, ensuring the safety and efficiency of the charging process.
3. **Industrial Power System:**
2SJ666-VB can be used for power management and drivers in industrial power systems. Its high current carrying capacity and low on-resistance make it an ideal choice in industrial environments, ensuring stable operation of equipment.
4. **Solar Inverter: **
Due to its high current carrying capacity and low on-resistance, the 2SJ666-VB can be used in solar inverters to ensure high efficiency and stability when solar panels deliver power to the grid.
In summary, VBsemi's 2SJ666-VB MOSFET is a versatile and high-performance component suitable for a wide range of applications, including power management, electric vehicle charging piles, industrial power systems and solar inverters. Its advanced channel technology and robust specifications make it an ideal choice for harsh environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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