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2SJ664-VB Product details
Back to previous pageProduct introduction：
### 1. 2SJ664-VB Product Introduction
2SJ664-VB is a single P-channel MOSFET in TO263 package. This model is manufactured using Trench technology, has low on-resistance and excellent switching characteristics, and is suitable for medium-power circuit design. Its maximum drain-source voltage (VDS) is -100V, maximum gate-source voltage (VGS) is ±20V, threshold voltage (Vth) is -2V, on-resistance (RDS(ON)) is 50mΩ at VGS=4.5V, 40mΩ at VGS=10V, and maximum drain current (ID) is -37A.
2SJ664-VB is a single P-channel MOSFET in TO263 package. This model is manufactured using Trench technology, has low on-resistance and excellent switching characteristics, and is suitable for medium-power circuit design. Its maximum drain-source voltage (VDS) is -100V, maximum gate-source voltage (VGS) is ±20V, threshold voltage (Vth) is -2V, on-resistance (RDS(ON)) is 50mΩ at VGS=4.5V, 40mΩ at VGS=10V, and maximum drain current (ID) is -37A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -100V | -2V | -37A | 50mΩ | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -100V | -2V | -37A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -100V | -2V | -37A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel |
### 2. 2SJ664-VB Detailed parameter description
- **Model**: 2SJ664-VB
- **Package**: TO263
- **Type**: Single P channel
- **Technology**: Trench
- **Maximum drain-source voltage (VDS)**: -100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- @ VGS=4.5V: 50mΩ
- @ VGS=10V: 40mΩ
- **Maximum drain current (ID)**: -37A
- **Turning-on delay time**: < 10ns
- **Turning-off delay time**: < 20ns
- **Total gate charge (Qg)**: 70nC
- **Gate-drain charge (Qgd)**: 18nC
- **Drain-source charge (Qgs)**: 52nC
- **Thermal resistance (RθJC)**: < 1.2°C/W
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
### 3. Application fields and module examples
#### Power management module
2SJ664-VB is widely used in medium-power power management modules, such as switching power supplies and voltage regulators, and performs well in applications that require high efficiency and low loss.
#### Automotive electronics
Due to its higher drain current and lower on-resistance, this model is suitable for power switches and drive circuits in automotive electronic systems, such as on-board chargers, electric vehicle battery management systems, etc.
#### Industrial control
In the field of industrial control, 2SJ664-VB can be used in various medium-power motor drives and control systems, such as industrial automation equipment and mechanical control systems.
#### LED lighting
In LED lighting applications, this model can be used in LED drive circuits and dimming systems to help achieve high efficiency and stability of LED light source control.
#### Communication Equipment
In communication equipment, 2SJ664-VB can be used in power amplifiers and power management modules to ensure that the equipment works with high efficiency and stability.
In summary, 2SJ664-VB has a wide range of application prospects in medium-power circuit design. It is a high-performance MOSFET component suitable for a variety of electronic devices and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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