中文
English
2SJ655-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Product Model: 2SJ655-VB**
**Package Type: TO220F**
**Configuration: Single P-channel**
**Technology: Trench**
**Main Features:**
- **VDS (drain-source voltage):** -100V
- **VGS (gate-source voltage):** ±20V
- **Vth (threshold voltage):** -2V
- **RDS(ON) (on-resistance):** 120mΩ@VGS=4.5V; 100mΩ@VGS=10V
- **ID (drain current):** -23A
2SJ655-VB is a high-performance P-channel MOSFET suitable for high-power switching power supplies and motor control applications.
**Product Model: 2SJ655-VB**
**Package Type: TO220F**
**Configuration: Single P-channel**
**Technology: Trench**
**Main Features:**
- **VDS (drain-source voltage):** -100V
- **VGS (gate-source voltage):** ±20V
- **Vth (threshold voltage):** -2V
- **RDS(ON) (on-resistance):** 120mΩ@VGS=4.5V; 100mΩ@VGS=10V
- **ID (drain current):** -23A
2SJ655-VB is a high-performance P-channel MOSFET suitable for high-power switching power supplies and motor control applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P-Channel | -100V | -2V | -23A | 120mΩ | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P-Channel | -100V | -2V | -23A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P-Channel | -100V | -2V | -23A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P-Channel |
### Parameter Description
1. **Basic parameters:**
- **Model:** 2SJ655-VB
- **Package type:** TO220F
- **Configuration:** Single P-channel
- **Technology:** Trench
2. **Electrical characteristics:**
- **Drain-source voltage (VDS):** -100V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -2V
3. **On-resistance (RDS(ON)):**
- **@ VGS=4.5V:** 120mΩ
- **@ VGS=10V:** 100mΩ
4. **Drain current (ID):** -23A
5. **Other Features:**
- **Maximum Power Dissipation:** 180W
- **Operating Temperature Range:** -55°C to 150°C
Domain and module applications：
### Applications and Modules
1. **Switching Power Supply: **
2SJ655-VB is suitable for high-power switching power supplies, such as power adapters, power tool chargers, etc. Its low on-resistance and high drain current capability help improve energy efficiency and stability.
2. **Motor Control: **
In motor control systems in industrial and automotive fields, this MOSFET can be used as a power switch to provide efficient current control and management to help improve system performance.
3. **Electric Vehicle Charging Pile: **
The power switch used in electric vehicle charging piles can withstand high voltage and current to ensure charging efficiency and safety.
4. **Industrial Automation: **
In industrial automation equipment, 2SJ655-VB can be used in high-power motor drive, servo control and other applications to improve system efficiency and accuracy.
In summary, 2SJ655-VB is a high-performance P-channel MOSFET suitable for various high-power power supply and motor control applications, and is an ideal choice for many industrial and automotive electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
