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2SJ646-VB Product details
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### 1. 2SJ646-VB Product Introduction
VBsemi's 2SJ646-VB is a high-performance single P-channel MOSFET manufactured using advanced Trench technology. The device is packaged in a TO-252 package and has low on-resistance and high current handling capabilities, making it suitable for a variety of power management and switching applications. Its features include -30V drain-source voltage (VDS) and ±20V gate-source voltage (VGS), ensuring stable operation in a variety of circuits.
VBsemi's 2SJ646-VB is a high-performance single P-channel MOSFET manufactured using advanced Trench technology. The device is packaged in a TO-252 package and has low on-resistance and high current handling capabilities, making it suitable for a variety of power management and switching applications. Its features include -30V drain-source voltage (VDS) and ±20V gate-source voltage (VGS), ensuring stable operation in a variety of circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -30V | -1.7V | -38A | 46mΩ | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel |
### 2. Detailed parameter description of 2SJ646-VB
- **Model**: 2SJ646-VB
- **Package type**: TO-252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 46mΩ @ VGS=4.5V
- 33mΩ @ VGS=10V
- **Drain current (ID)**: -38A
- **Technology**: Trench
Domain and module applications：
### 3. Application fields and module examples
1. **Battery protection circuit**: Due to its low on-resistance and high drain current, 2SJ646-VB is suitable for use as a switching device in battery protection circuits. These protection circuits can be used in applications such as mobile devices and power tools to ensure battery safety and reliability.
2. **Power switch module**: 2SJ646-VB is also widely used in power switch modules that require low drain-source voltage and high current handling capabilities. These modules play a key role in power management systems such as switching power supplies and inverters.
3. **Automotive electronic system**: This MOSFET is also suitable for various applications in automotive electronic systems such as lighting, drives, and battery management. Its high performance and reliability make it an ideal choice for automotive electronic systems.
In summary, 2SJ646-VB is suitable for a variety of power management and switching applications that require high performance and reliability. Its characteristics make it widely used in electronic equipment, automotive, and industrial applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
