中文
English
2SJ645-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Model: 2SJ645-VB**
2SJ645-VB is a single P-channel metal oxide semiconductor field effect transistor (MOSFET) in TO-252 package. This product has low on-resistance and high drain current, suitable for applications requiring high efficiency and medium power. It uses Trench technology and has excellent electrical characteristics and reliability.
**Model: 2SJ645-VB**
2SJ645-VB is a single P-channel metal oxide semiconductor field effect transistor (MOSFET) in TO-252 package. This product has low on-resistance and high drain current, suitable for applications requiring high efficiency and medium power. It uses Trench technology and has excellent electrical characteristics and reliability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -30V | -1.7V | -38A | 46mΩ | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel |
### Detailed parameter description
- **Package:** TO-252
- **Configuration:** Single P-channel
- **Drain-source voltage (VDS):** -30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -1.7V
- **On-resistance (RDS(ON)):**
- 46mΩ @ VGS=4.5V
- 33mΩ @ VGS=10V
- **Drain current (ID):** -38A
- **Technology:** Trench
Domain and module applications：
### Application Fields and Module Examples
**1. Power Management Modules: **
2SJ645-VB is suitable for medium-power power management modules, such as power management circuits for laptops and tablets. Its low on-resistance and high drain current characteristics provide high efficiency and reliability.
**2. LED Drivers: **
In the field of LED lighting, this MOSFET can be used for power switching and dimming control of LED drivers. Its high drain current and low on-resistance help improve the efficiency and stability of LED lighting systems.
**3. Automotive Electronic Systems: **
2SJ645-VB can be applied to power management modules and drivers in automotive electronic systems. Its excellent electrical characteristics and reliability make it suitable for automotive battery management systems (BMS) and motor drive control.
**4. Industrial Automation Equipment: **
This model is suitable for medium-power motor control modules in industrial automation equipment. Its high drain current and low on-resistance can improve the efficiency and response speed of the device.
The application examples of 2SJ645-VB MOSFET in the above fields illustrate its superior performance and wide applicability in medium power and high efficiency circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
