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2SJ636-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Product Model: 2SJ636-VB**
**Package Type: TO252**
**Configuration: Single P-channel**
**Technology: Trench**
**Main Features:**
- **VDS (drain-source voltage):** -100V
- **VGS (gate-source voltage):** ±20V
- **Vth (threshold voltage):** -2V
- **RDS(ON) (on-resistance):** 280mΩ@VGS=4.5V; 250mΩ@VGS=10V
- **ID (drain current):** -8.8A
2SJ636-VB is a high-performance P-channel MOSFET suitable for a variety of low-voltage power supply and switching circuit applications.
**Product Model: 2SJ636-VB**
**Package Type: TO252**
**Configuration: Single P-channel**
**Technology: Trench**
**Main Features:**
- **VDS (drain-source voltage):** -100V
- **VGS (gate-source voltage):** ±20V
- **Vth (threshold voltage):** -2V
- **RDS(ON) (on-resistance):** 280mΩ@VGS=4.5V; 250mΩ@VGS=10V
- **ID (drain current):** -8.8A
2SJ636-VB is a high-performance P-channel MOSFET suitable for a variety of low-voltage power supply and switching circuit applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -100V | -2V | -8.8A | 280mΩ | 250mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -100V | -2V | -8.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -100V | -2V | -8.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel |
### Parameter Description
1. **Basic parameters:**
- **Model:** 2SJ636-VB
- **Package type:** TO252
- **Configuration:** Single P-channel
- **Technology:** Trench
2. **Electrical characteristics:**
- **Drain-source voltage (VDS):** -100V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -2V
3. **On-resistance (RDS(ON)):**
- **@ VGS=4.5V:** 280mΩ
- **@ VGS=10V:** 250mΩ
4. **Drain current (ID):** -8.8A
5. **Other Features:**
- **Maximum Power Dissipation:** 25W
- **Operating Temperature Range:** -55°C to 150°C
Domain and module applications：
### Applications and Modules
1. **Low-voltage power supply: **
Due to its low on-resistance and high drain current carrying capacity, 2SJ636-VB is suitable for switching and voltage regulation control of low-voltage power supply.
2. **LED lighting: **
In LED lighting drive circuits, this MOSFET can be used for switching power supplies and LED drivers to ensure efficient energy conversion and stable current output.
3. **Power tools: **
Used in motor control circuits in power tools, it can provide efficient current switching and management, and improve the performance and life of power tools.
4. **Automotive electronics: **
In the field of automotive electronics, 2SJ636-VB can be used for motor control and other power switching applications in vehicle electronic control units (ECUs) to improve the efficiency and reliability of automotive electronic systems.
In summary, 2SJ636-VB is a versatile P-channel MOSFET suitable for a variety of low-voltage, high-current power and switching applications, and is an ideal choice in many electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
